Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH

Autor: Posseme, N., Chevolleau, T., David, T., Darnon, M., Barnes, J.P., Louveau, O., Licitra, C., Jalabert, D., Feldis, H., Fayolle, M., Joubert, O.

Publikováno v: In Microelectronic Engineering 2008 85(8):1842-1849

Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low- k dielectric material

Autor: Aimadeddine, M., Arnal, V., Farcy, A., Guedj, C., Chevolleau, T., Possémé, N., David, T., Assous, M., Louveau, O., Volpi, F., Torres, J.

Publikováno v: In Microelectronic Engineering 2005 82(3):341-347

A global evaluation of stripping efficiency by TD-GCMS

Autor: Danel, A. ^*, Veillerot, M., Louveau, O., Millet, C., Tardif, F.

Publikováno v: In Materials Science & Engineering B 2003 102(1):30-36

Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology

Autor: Fayolle, M ^∗, Torres, J, Passemard, G, Fusalba, F, Fanget, G, Louis, D, Assous, M, Louveau, O, Rivoire, M, Haxaire, K, Mourier, M, Maitrejean, S, Besson, P, Broussous, L, Arnaud, L, Feldis, H

Publikováno v: In Microelectronic Engineering 2002 64(1):35-42

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas in high-density plasmas

Autor: Posseme, N., Chevolleau, T., David, T., Darnon, Maxime, Louveau, O., Joubert, O.

Publikováno v: Journal of Vacuum Science and Technology
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2007, pp.B 25, (2007) 1928-1940
Journal of Vacuum Science and Technology, 2007, pp.B 25, (2007) 1928-1940

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::07641391343a8b09907849317abedee1
https://hal.archives-ouvertes.fr/hal-00397094