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pro vyhledávání: '"Louison C. Tan"'
Autor:
Robert J. Hillard, Louison C. Tan, Kimberly G. Reid, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
In this paper a non‐damaging and non‐contaminating method for performing Capacitance‐Voltage (CV) and Current‐Voltage (IV) electrical characterization of advanced gate dielectrics and stack capacitor films is presented. The method uses a cont
Electrical characterization of silicon-on-insulator structures with a nondamaging elastic–metal gate
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:450
This article explores electrical characterization methods for silicon-on-insulator (SOI) structures with a nondamaging elastic metal gate (EM gate). Important material electrical properties related to the top silicon layer, gate dielectric and interf