Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Louise Lilja"'
Publikováno v:
Crystal Growth & Design. 19:3288-3297
On-axis homoepitaxy of 4H-SiC has the advantage of producing epilayers that are free of basal plane dislocations. Such layers can be highly beneficial for SiC-based high-power bipolar electronic devices which otherwise suffer from bipolar degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e30dd0b92da70a6bc9d1143f642a6157
https://doi.org/10.1021/acs.cgd.9b00141
https://doi.org/10.1021/acs.cgd.9b00141
Publikováno v:
Materials Science Forum. 897:238-241
In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9a142ddcdc65458b330c2cc781d905
https://doi.org/10.4028/www.scientific.net/msf.897.238
https://doi.org/10.4028/www.scientific.net/msf.897.238
Publikováno v:
Materials Science Forum. 858:209-212
4H-SiC epilayers with very smooth surfaces were grown with high growth rates on 4° off-cut substrates using standard silane/propane chemistry. Specular surfaces with RMS values below 0.2 nm are presented for epilayers grown with growth rates up to 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf7f59bcc2c91750ac46967ea0a3736
https://doi.org/10.4028/www.scientific.net/msf.858.209
https://doi.org/10.4028/www.scientific.net/msf.858.209
Autor:
Louise Lilja
Publikováno v:
Linköping Studies in Science and Technology. Dissertations ISBN: 9789176851937
Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compare ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9cd30d99219c15f5645ecc7a231bed
https://doi.org/10.3384/diss.diva-152500
https://doi.org/10.3384/diss.diva-152500
Publikováno v:
Materials Science and Engineering: C. 47:376-383
Titanium received a macroporous titania surface layer by anodization, which contains open pores with average pore diameter around 5 μm. An additional mesoporous titania top layer following the contour of the macropores, of 100-200 nm thickness and w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4516ea6333234e00d68a5fe1e6fa118
https://doi.org/10.1016/j.msec.2014.11.021
https://doi.org/10.1016/j.msec.2014.11.021
Publikováno v:
physica status solidi (b). 252:1319-1324
4H-SiC epilayers were grown on 2 degrees off-cut substrates using standard silane/propane chemistry, with the aim of characterizing in-grown stacking faults. The stacking faults were analyzed with ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57efdfa6dfe0cb583a007421ea7202ec
https://doi.org/10.1002/pssb.201451710
https://doi.org/10.1002/pssb.201451710
Autor:
Peder Bergman, Jawad ul Hassan, Hassan Abdalla, Louise Lilja, Erik Janzén, Ian Don Booker, Einar Ö. Sveinbjörnsson
Publikováno v:
Materials Science Forum. :281-284
The deep levels ON1and ON2a/bintroduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/bdefect is achieved by using a higher resolution correlation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032bae3465ba273c6dddc83a9785b734
https://doi.org/10.4028/www.scientific.net/msf.778-780.281
https://doi.org/10.4028/www.scientific.net/msf.778-780.281
Autor:
Heung Taek Bae, Pontus Stenberg, Seo Yong Ha, Jawad ul Hassan, Erik Janzén, Jianwu Sun, Peder Bergman, Ildikó Farkas, Olle Kordina, Louise Lilja, Ickchan Kim
Publikováno v:
Materials Science Forum. :179-182
We report the development of over 100 μm/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5a364aa8f49580e89707ee6ae0b8ea
https://doi.org/10.4028/www.scientific.net/msf.778-780.179
https://doi.org/10.4028/www.scientific.net/msf.778-780.179
Autor:
Jawad ul Hassan, Birgit Kallinger, J. Peder Bergman, Louise Lilja, Ian Don Booker, Mathias Rommel, Erik Janzén
Publikováno v:
Materials Science Forum. :301-304
Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC wafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e780e1485080b00c903e1e07ed45fc
https://doi.org/10.4028/www.scientific.net/msf.778-780.301
https://doi.org/10.4028/www.scientific.net/msf.778-780.301
Publikováno v:
Materials Science Forum. :206-209
Homoepitaxial layers of 4H-SiC were grown with horizontal hot-wall CVD on 2˚ off-cut substrates, with the purpose of improving the surface morphology of the epilayers and reducing the density of surface morphological defects. In-situ etching conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c465cf98bc2c5a75d74eceeddfc19e0d
https://doi.org/10.4028/www.scientific.net/msf.778-780.206
https://doi.org/10.4028/www.scientific.net/msf.778-780.206