Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Louis M. Mt. Pleasant"'
Autor:
P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman
Publikováno v:
IEEE Transactions on Electron Devices. 63:3076-3083
We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160
https://doi.org/10.1109/ted.2016.2579160
Autor:
Xu, Dong, Chu, Kanin, Diaz, Jose A., Ashman, Michael D., Komiak, J. J., Mt. Pleasant, Louis M., Vera, Alice, Seekell, Philip, Yang, Xiaoping, Creamer, Carlton, Nichols, K. B., Duh, K. H. George, Smith, Phillip M., Chao, P. C., Dong, Lin, Ye, Peide D.
Publikováno v:
IEEE Transactions on Electron Devices; Aug2016, Vol. 63 Issue 8, p3076-3083, 8p
Autor:
Xu, Dong, Yang, Xiaoping, Seekell, Philip, Mt. Pleasant, Louis M., Mohnkern, Lee, Chu, Kanin, Stedman, Rodney G., Vera, Alice, Isaak, Richard, Schlesinger, Laureen L., Carnevale, Robert A., Duh, K. H. George, Smith, Phillip M., Chao, P. C.
Publikováno v:
IEEE Transactions on Electron Devices; Jan2012, Vol. 59 Issue 1, p128-138, 11p
Autor:
Xu, Dong, Yang, Xiaoping, Kong, Wendell M. T., Seekell, Philip, Louie, Kenneth, Pleasant, Louis, Mohnkern, Lee, Dugas, Douglas M., Chu, Kanin, Karimy, Hamid F., Duh, K. H. George, Smith, Phillip M., Chao, P. C.
Publikováno v:
IEEE Transactions on Electron Devices; 05/01/2011, Vol. 58 Issue 5, p1408-1417, 10p