Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Louis Kindt"'
Autor:
Ravi K. Bonam, Masayuki Kagawa, Takeshi Isogawa, Kevin W. Collins, Mark Lawliss, Lin Cheong, Jed H. Rankin, Eisuke Narita, Richard Poro, Luke Bolton, Louis Kindt, Christina Turley
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imagin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7668026b297ead3a0c08413b3180d566
https://doi.org/10.1117/12.2197383
https://doi.org/10.1117/12.2197383
Autor:
Daniel Corliss, Jed H. Rankin, Lin Lee Cheong, Christopher F. Robinson, Dusty Leonhard, Louis Kindt, Christina Turley, John Boyle
Publikováno v:
SPIE Proceedings.
The cleaning requirements for EUV masks are more complex than optical masks due to the absence of available EUVcompatible pellicles. EUV masks must therefore be capable of undergoing more than 100 cleaning cycles with minimum impact to lithographic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9961bc41a6ff1faeb721e94040fe4695
https://doi.org/10.1117/12.2085913
https://doi.org/10.1117/12.2085913
Autor:
Ravi K. Bonam, Masayuki Kagawa, Steven C. Nash, Yoshifumi Sakamoto, Jonathan Grohs, Eisuke Narita, Emily Gallagher, Louis Kindt, Christina Turley
Publikováno v:
SPIE Proceedings.
The black border is a frame created by removing all the multilayers on the EUV mask in the region around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a wafer. Papers have documented its effectiveness. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2cf043febd1f70b8711232f75fe3310
https://doi.org/10.1117/12.2070047
https://doi.org/10.1117/12.2070047
Autor:
Yukio Inazuki, Tasuku Senna, Hiroki Yoshikawa, Satoru Nemoto, Kazunori Seki, Karen D. Badger, Louis Kindt, Satoshi Akutagawa, Shinich Igarashi, Kazuhiro Nishikawa, Tom Faure, Takashi Mizoguchi, Richard Wistrom, Jun Kotani
Publikováno v:
SPIE Proceedings.
The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcf0c9dac454e9f63e34632a807994f
https://doi.org/10.1117/12.898889
https://doi.org/10.1117/12.898889
Publikováno v:
SPIE Proceedings.
Through a series of experiments and simulation studies, this paper will explore the lithographic impact of absorber thickness choice on an EUV photomask and highlight the trade-offs that exist between thick and thin absorbers. Fundamentally, thinning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ba8d82c9cfc8348db6758698cc50b7
https://doi.org/10.1117/12.898912
https://doi.org/10.1117/12.898912
Autor:
Gregory McIntyre, Monica Barrett, Louis Kindt, John Whang, Sudharshanan Raghunathan, Obert Wood, Tom Wallow, Emily Gallagher
Publikováno v:
SPIE Proceedings.
This paper focuses on the practical side of EUV mask metrology and use. Mask metrics such as film thickness, material properties, feature profile, critical feature size, line edge/width roughness (LER/LWR) and defect levels are measured and monitored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1582dc68146b9d7ec0936d0f9bf58195
https://doi.org/10.1117/12.880755
https://doi.org/10.1117/12.880755
Autor:
John Whang, Monica Barrett, Uzodinma Okoroanyanwu, Tom Wallow, Emily Gallagher, Louis Kindt, Hirokazu Kato, Obert Wood
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) offers the promise of dramatically improved resolution at the price of introducing a complex web of new lithographic challenges. The most conspicuous departure from DUV lithography is that exposure the wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c3d2cd4ee417ff31df6c63d1d91bfa
https://doi.org/10.1117/12.864948
https://doi.org/10.1117/12.864948
Autor:
Louis Kindt, Craig Benson, John M. Leonard, Jim B. Densmore, Robert Nolan, Kathleen G. Purdy, Nancy Zhou, David Shanks, Cynthia Whiteside
Publikováno v:
SPIE Proceedings.
Lean manufacturing is a systematic method of identifying and eliminating waste. Use of Lean manufacturing techniques at the IBM photomask manufacturing facility has increased efficiency and productivity of the photomask process. Tools, such as, value
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55b59d59e6aecba09f0759ba4075cbe
https://doi.org/10.1117/12.864524
https://doi.org/10.1117/12.864524
Autor:
Kazunori Seki, Amy E. Zweber, Toru Komizo, Yukio Inazuki, Satoru Nemoto, Takashi Mizoguchi, Yutaka Kodera, Tom Faure, Richard Wistrom, Karen D. Badger, Kazuhiro Nishikawa, Shinpei Kondo, Tasuku Senna, Hiroki Yoshikawa, Louis Kindt
Publikováno v:
SPIE Proceedings.
The lithography challenges posed by the 22 nm node continue to place stringent requirements on photomasks. The dimensions of the mask features continue to shrink more deeply into the sub-wavelength scale. In this regime residual mask electromagnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e682b40d132d799dfc961c964bb9736
https://doi.org/10.1117/12.864130
https://doi.org/10.1117/12.864130
Autor:
Ken Racette, Louis Kindt, Alfred Wagner, Amy E. Zweber, Thomas B. Faure, Toru Komizo, Satoru Nemoto, Michael S. Hibbs, Yasutaka Kikuchi, Richard Wistrom, Emily Gallagher
Publikováno v:
Photomask Technology 2008.
During the development of optical lithography extensions for 32nm, both binary and attenuated phase shift Reticle Enhancement Technologies (RETs) were evaluated. The mask blank has a very strong influence on the minimum feature size and critical dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e02206d503177157596633c869cbaf
https://doi.org/10.1117/12.801950
https://doi.org/10.1117/12.801950