Zobrazeno 1 - 10
of 130
pro vyhledávání: '"Louis Hutin"'
Autor:
Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Publikováno v:
npj Quantum Information, Vol 10, Iss 1, Pp 1-12 (2024)
Abstract Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), h
Externí odkaz:
https://doaj.org/article/fad589327d104537a2a480d3b048da06
Autor:
S. S. Teja Nibhanupudi, Siddhartha Raman Sundara Raman, Mikael Casse, Louis Hutin, Jaydeep P. Kulkarni
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 201-208 (2021)
Operating CMOS circuits at cryogenic temperatures offers advantages of higher mobility, higher ON-current, and better subthreshold characteristics, which can be leveraged to realize high-performance CMOS circuits. However, an ultra-low-voltage operat
Externí odkaz:
https://doaj.org/article/42af5379ef9447f2a009195b668fafb8
Autor:
Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi, Benoit Bertrand, Louis Hutin, Maud Vinet, Ferdinand Kuemmeth
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Semiconductor spin-qubits with CMOS compatible architectures could benefit from the industrial capacity of the semiconductor industry. Here, the authors make the first steps in demonstrating this by showing single electron operations within a two-dim
Externí odkaz:
https://doaj.org/article/c14e50c999144de78c67ddcee9bdf69f
Autor:
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth
Publikováno v:
New Journal of Physics, Vol 25, Iss 3, p 033023 (2023)
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-v
Externí odkaz:
https://doaj.org/article/295ab630356e4bdb8de156cc3098d49b
Autor:
Louis Hutin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 562-562 (2022)
The current trend of applicative diversification in the semiconductor market, together with steepening technological challenges have stressed the need for increasingly holistic approaches based on co-optimization across the traditionally defined doma
Externí odkaz:
https://doaj.org/article/3c6c9960b68c401ab61e5412ed469db0
Autor:
David J. Ibberson, Theodor Lundberg, James A. Haigh, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Chang-Min Lee, Nadia A. Stelmashenko, Giovanni A. Oakes, Laurence Cochrane, Jason W.A. Robinson, Maud Vinet, M. Fernando Gonzalez-Zalba, Lisa A. Ibberson
Publikováno v:
PRX Quantum, Vol 2, Iss 2, p 020315 (2021)
We report fast charge-state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting
Externí odkaz:
https://doaj.org/article/aa02045c8f77456198cbb0119132a1e5
Autor:
Virginia N. Ciriano-Tejel, Michael A. Fogarty, Simon Schaal, Louis Hutin, Benoit Bertrand, Lisa Ibberson, M. Fernando Gonzalez-Zalba, Jing Li, Yann-Michel Niquet, Maud Vinet, John J.L. Morton
Publikováno v:
PRX Quantum, Vol 2, Iss 1, p 010353 (2021)
Silicon spin qubits are promising candidates for realizing large-scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement o
Externí odkaz:
https://doaj.org/article/5f9f154a1c644215ba2d46008d263ed8
Autor:
Theodor Lundberg, Jing Li, Louis Hutin, Benoit Bertrand, David J. Ibberson, Chang-Min Lee, David J. Niegemann, Matias Urdampilleta, Nadia Stelmashenko, Tristan Meunier, Jason W. A. Robinson, Lisa Ibberson, Maud Vinet, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba
Publikováno v:
Physical Review X, Vol 10, Iss 4, p 041010 (2020)
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-
Externí odkaz:
https://doaj.org/article/eb9f71a0a9c8445eb900db258d6b98c5
Autor:
Sylvain Barraud, Romain Lavieville, Louis Hutin, Heorhii Bohuslavskyi, Maud Vinet, Andrea Corna, Paul Clapera, Marc Sanquer, Xavier Jehl
Publikováno v:
Technologies, Vol 4, Iss 1, p 10 (2016)
The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device
Externí odkaz:
https://doaj.org/article/bb94061b3f044f8883f2822e44ffd408
Autor:
Thibaud Fache, Maxime Moulin, Ismael Charlet, Zdenek Chalupa, Jean-Pierre Raskin, Frédéric Allibert, Christophe Plantier, Fred Gaillard, Louis Hutin
Publikováno v:
2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.