Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Louis Guido"'
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015116-015116-7 (2020)
Schottky diodes were formed by oxidizing Ru thin films deposited on n-type GaN at 400, 500, and 600 °C in normal laboratory air, and their electrical behavior was compared to that of a Ru/n-GaN reference device. The GaN epitaxial layers were grown v
Externí odkaz:
https://doaj.org/article/9af261681c4c4e3389b8177834cff742
Autor:
Timothy Ciarkowski, Noah Allen, Eric Carlson, Robert McCarthy, Chris Youtsey, Jingshan Wang, Patrick Fay, Jinqiao Xie, Louis Guido
Publikováno v:
Materials, Vol 12, Iss 15, p 2455 (2019)
Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in Ga
Externí odkaz:
https://doaj.org/article/46b582668abe44f88b24225fcecd9f0d
Autor:
Yunwei Ma, Ming Xiao, Zhonghao Du, Lei Wang, Eric Carlson, Louis Guido, Han Wang, Lai Wang, Yi Luo, Yuhao Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4224-4230
Publikováno v:
2001 Annual Conference Proceedings.