Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Louis Giraudet"'
Publikováno v:
Organic Electronics
Organic Electronics, 2021, 99, pp.106350. ⟨10.1016/j.orgel.2021.106350⟩
Organic Electronics, Elsevier, 2021, 99, pp.106350. ⟨10.1016/j.orgel.2021.106350⟩
Organic Electronics, 2021, 99, pp.106350. ⟨10.1016/j.orgel.2021.106350⟩
Organic Electronics, Elsevier, 2021, 99, pp.106350. ⟨10.1016/j.orgel.2021.106350⟩
International audience; The presence of traps in organic semiconductor based electronic devices affects considerably their performances and their stability. The Shockley-Read-Hall (SRH) model is generally used to extract the trap parameters from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56629ac38913502884729f6490eb92c1
https://hal.science/hal-03406950
https://hal.science/hal-03406950
Autor:
Mélanie Brouillard, Nicolas Bercu, Ute Zschieschang, Olivier Simonetti, Rakesh Mittapalli, Hagen Klauk, Louis Giraudet
Publikováno v:
Nanoscale advances. 4(8)
A method is proposed to estimate the lateral resolution of surface potential profile measurements using Kelvin probe force microscopy (KPFM) on operating electronic devices. De-embedding the measured profile from the system response is required for v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6c953dae515bd8c74071370b9a39910
https://pubmed.ncbi.nlm.nih.gov/36133418
https://pubmed.ncbi.nlm.nih.gov/36133418
Autor:
O. Simonetti, Louis Giraudet
Publikováno v:
Polymer International. 68:620-636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08682582f171fba421705b2ae51f997a
https://doi.org/10.1002/pi.5768
https://doi.org/10.1002/pi.5768
Autor:
Sungyeop Jung, Louis Giraudet, S. D. Baranovskii, Andrew Plews, Yvan Bonnassieux, Ahmed Nejim, Gilles Horowitz, Sungjune Jung, Florian Gebhard, Yongjeong Lee, O. Simonetti, Klaus Meerholz
Publikováno v:
Physical Review Applied. 15
Correct parameterization of the Gaussian disorder model (GDM) on spatially random sites is necessary for a complete description of charge transport in disordered materials and concomitant device characteristics. Because the GDM on spatially random si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5779b9ada2d6692f1774ec2a7e9f16
https://doi.org/10.1103/physrevapplied.15.024021
https://doi.org/10.1103/physrevapplied.15.024021
Autor:
Louis Giraudet, Mélanie Brouillard, O. Simonetti, Ute Zschieschang, Hagen Klauk, Nicolas Bogdan Bercu
Publikováno v:
Organic and Hybrid Field-Effect Transistors XIX.
Using Kelvin Probe Force Microscopy (KPFM), we performed surface-potential measurements on operating organic thin-film transistors (TFTs). Several parameters inaccessible through current-voltage measurements were determined, namely the source and dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a173a8be5379a81d35ed326055957989
https://doi.org/10.1117/12.2567406
https://doi.org/10.1117/12.2567406
Autor:
Louis Giraudet, N.B. Bercu, I. P. Soshnikiv, A. D. Bondarev, Nikita A. Pikhtin, Michael Molinari, E. V. Fomin, Thomas Maurer
Publikováno v:
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, MAIK Nauka/Interperiodica (МАИК Наука/Интерпериодика), 2020, 46 (3), pp.268-271. ⟨10.1134/S1063785020030207⟩
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2020, 46 (3), pp.268-271. ⟨10.1134/S1063785020030207⟩
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, MAIK Nauka/Interperiodica (МАИК Наука/Интерпериодика), 2020, 46 (3), pp.268-271. ⟨10.1134/S1063785020030207⟩
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, 2020, 46 (3), pp.268-271. ⟨10.1134/S1063785020030207⟩
Thin aluminum nitride (AlN) films have been synthesized by reactive ion–plasma sputtering (RIPS) and their properties have been studied in view of using this method for obtaining protective coatings on output facets of high-power semiconductor lase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::089a2645bbc09a3a9fd3f929cf7b92e0
https://hal-utt.archives-ouvertes.fr/hal-02567506
https://hal-utt.archives-ouvertes.fr/hal-02567506
Publikováno v:
Journal of Microscopy. 267:272-279
Summary An improved setup for accurate near-field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster-scan of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b27940fecf73bea6a9600dc454e72017
https://doi.org/10.1111/jmi.12563
https://doi.org/10.1111/jmi.12563
Autor:
Tim J. Puchtler, Louis Giraudet, Christophe Couteau, Bogdan Bercu, Robert A. Taylor, J-Ph Girard, Sergei Kostcheev
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2018, 29 (50), pp.505207. ⟨10.1088/1361-6528/aae417⟩
Nanotechnology, 2018, 29 (50), pp.505207. ⟨10.1088/1361-6528/aae417⟩
Nanotechnology, Institute of Physics, 2018, 29 (50), pp.505207. ⟨10.1088/1361-6528/aae417⟩
Nanotechnology, 2018, 29 (50), pp.505207. ⟨10.1088/1361-6528/aae417⟩
In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By taking current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66e150e716c076603100abe14363b58c
Autor:
Sungjune Jung, S. D. Baranovskii, Andrew Plews, Yongjeong Lee, Louis Giraudet, Sungyeop Jung, Ahmed Nejim, Yvan Bonnassieux, Gilles Horowitz, O. Simonetti
Publikováno v:
ECS Meeting Abstracts. :1919-1919
So far, the most widely addressed hopping transport model for organic disordered semiconductors (ODSs) is the so-called extended Gaussian disordered model (EGDM) [1] based on numerical simulations within the cubic lattice without spatial disorder. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed504d609940095b394f7d6ceda55019
https://doi.org/10.1149/ma2020-02281919mtgabs
https://doi.org/10.1149/ma2020-02281919mtgabs
Publikováno v:
Письма в журнал технической физики. 46:16
The paper presents the results of the synthesis of thin aluminum nitride films by reactive ion-plasma sputtering and the study of their properties with the aim of using as the protective coatings for the high-power AlxGa1-xAs/GaAs semiconductor laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc99ed76efca65073e30949442c8389e
https://doi.org/10.21883/pjtf.2020.06.49158.18088
https://doi.org/10.21883/pjtf.2020.06.49158.18088