Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Lou, Wenkai"'
Autor:
Zhang, Xu, Zhu, Tongshuai, Zhang, Shuai, Chen, Zhongqiang, Song, Anke, Zhang, Chong, Gao, Rongzheng, Niu, Wei, Chen, Yequan, Fei, Fucong, Tai, Yilin, Li, Guoan, Ge, Binghui, Lou, Wenkai, Shen, Jie, Zhang, Haijun, Chang, Kai, Song, Fengqi, Zhang, Rong, Wang, Xuefeng
Publikováno v:
Nature Communications (2024)
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal tra
Externí odkaz:
http://arxiv.org/abs/2403.04515
Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve
Externí odkaz:
http://arxiv.org/abs/2310.17243
Autor:
Wang, Yaning, Gao, Xiang, Yang, Kaining, Gu, Pingfan, Lu, Xin, Zhang, Shihao, Gao, Yuchen, Ren, Naijie, Dong, Baojuan, Jiang, Yuhang, Watanabe, Kenji, Taniguchi, Takashi, Kang, Jun, Lou, Wenkai, Mao, Jinhai, Liu, Jianpeng, Ye, Yu, Han, Zheng Vitto, Chang, Kai, Zhang, Jing, Zhang, Zhidong
Publikováno v:
Nature Nanotechnology (2022)
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit
Externí odkaz:
http://arxiv.org/abs/2110.02899
Autor:
Jiang, Zeyu, Lou, Wenkai, Liu, Yu, Li, Yuanchang, Song, Haifeng, Chang, Kai, Duan, Wenhui, Zhang, Shengbai
Publikováno v:
Phys. Rev. Lett. 124, 166401 (2020)
While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by fi
Externí odkaz:
http://arxiv.org/abs/1911.05244
Publikováno v:
Phys. Rev. B,99,085307(2019)
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier s
Externí odkaz:
http://arxiv.org/abs/1903.03939
Autor:
Yang, Fangyuan, Zhang, Zuocheng, Wang, Nai Zhou, Ye, Guo Jun, Lou, Wenkai, Zhou, Xiaoying, Watanabe, Kenji, Taniguchi, Takashi, Chang, Kai, Chen, Xian Hui, Zhang, Yuanbo
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although th
Externí odkaz:
http://arxiv.org/abs/1809.07536
Publikováno v:
In Physica B: Condensed Matter 1 December 2022 646
Akademický článek
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We investigate theoretically the electron spin states in disk-shaped HgTe topological insulator quantum dots (TIQDs) containing a single magnetic $Mn^{2+}$ ion. We show that the energy spectrum and the electron density distribution of the topological
Externí odkaz:
http://arxiv.org/abs/1808.00870
Autor:
Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui
Publikováno v:
Phys. Rev. Lett. 119, 056803 (2017)
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge
Externí odkaz:
http://arxiv.org/abs/1608.06588