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of 37
pro vyhledávání: '"Lotkhov, Sergey V"'
An application-specific Josephson generator is being developed as an on-chip calibration source for single-microwave-photon detectors operating below $T \sim $100 mK in the frequency range from 110 to 170 GHz. The targeted calibration power correspon
Externí odkaz:
http://arxiv.org/abs/1410.5314
Autor:
Lotkhov, Sergey V
In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperat
Externí odkaz:
http://arxiv.org/abs/1302.2086
Autor:
Camarota, Benedetta, Scherer, Hansjoerg, Keller, Mark W, Lotkhov, Sergey V, Willenberg, Gerd-Dietmar, Ahlers, Franz Josef
The Electron Counting Capacitance Standard currently pursued at PTB aims to close the Quantum Metrological Triangle with a final precision of a few parts in 10^7. This paper reports the considerable progress recently achieved with a new generation of
Externí odkaz:
http://arxiv.org/abs/1107.1616
Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local high-ohmic resi
Externí odkaz:
http://arxiv.org/abs/1106.6005
We have designed an experiment and performed extensive simulations and preliminary measurements to identify a set of realistic circuit parameters that should allow the observation of constant-current steps at I=2ef in short arrays of small Josephson
Externí odkaz:
http://arxiv.org/abs/1106.5328
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducti
Externí odkaz:
http://arxiv.org/abs/1010.2168
The dc transport properties of long arrays of small Al Josephson junctions, biased through on-chip Cr resistors, are studied. The IV-characteristics show a large Coulomb threshold for current as well as negative-slope regions indicating the regime of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610793
Autor:
Zangerle, Hermann, Könemann, Jens, Mackrodt, Brigitte, Dolata, Ralf, Lotkhov, Sergey V., Bogoslovsky, Sergey A., Götz, Martin, Zorin, Alexander B.
Publikováno v:
Phys. Rev. B 73, 224527 (2006)
We present investigations of Josephson charge-phase qubits inductively coupled to a radio-frequency driven tank-circuit enabling the readout of the states by measuring the Josephson inductance of the qubit. The circuits including junctions with linea
Externí odkaz:
http://arxiv.org/abs/cond-mat/0601199
Autor:
Furlan, Miha, Lotkhov, Sergey V.
Publikováno v:
Phys. Rev. B 67, 205313 (2003)
Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential variations
Externí odkaz:
http://arxiv.org/abs/cond-mat/0212184
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