Zobrazeno 1 - 10
of 292
pro vyhledávání: '"Lothar Frey"'
Autor:
Marina Scharin-Mehlmann, Aaron Häring, Mathias Rommel, Tobias Dirnecker, Oliver Friedrich, Lothar Frey, Daniel F. Gilbert
Publikováno v:
Frontiers in Bioengineering and Biotechnology, Vol 6 (2018)
Polydimethylsiloxane (PDMS) is a promising biomaterial for generating artificial extracellular matrix (ECM) like patterned topographies, yet its hydrophobic nature limits its applicability to cell-based approaches. Although plasma treatment can enhan
Externí odkaz:
https://doaj.org/article/a5ef377d24a34a2fa0a19b24e7f92ecb
Autor:
Xiao Ping Dai, Tomasz Sledziewski, Tobias Erlbacher, Anton J. Bauer, Yan Li Zhao, Lothar Frey, Cheng Zhan Li, Xi Ming Chen
Publikováno v:
Materials Science Forum. 963:490-493
A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is sho
Publikováno v:
Materials Science Forum. 963:827-831
In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, p-MOSFETs, CMOS inverters and ring oscillators with different channel impla
Autor:
Gian Domenico Licciardo, Tobias Erlbacher, Alfredo Rubino, Anton J. Bauer, Luigi Di Benedetto, Lothar Frey, Christian D. Matthus
Publikováno v:
Materials Science Forum. 963:572-575
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic
Publikováno v:
International Journal of Applied Electromagnetics and Mechanics. 59:97-104
Autor:
Mathias Rommel, Andreas Hutzler, Lothar Frey, Michael P. M. Jank, Erdmann Spiecker, Christian D. Matthus, Christian Dolle
Publikováno v:
The Journal of Physical Chemistry C. 123:9192-9201
An advanced and highly scalable approach for determining the number of layers of two-dimensional (2D) materials via optical spectroscopy is introduced. Based on appropriate subjacent layer stacks, the reflectance spectra of the 2D material assemblies
Publikováno v:
Materials Science in Semiconductor Processing. 90:205-211
In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the f
Autor:
Maiko Girschikofsky, Manuel Rosenberger, Michael Förthner, Mathias Rommel, Lothar Frey, Ralf Hellmann
Publikováno v:
Sensors, Vol 17, Iss 11, p 2459 (2017)
Embedded channel waveguide Bragg gratings are fabricated in the Ormocer® hybrid polymers OrmoComp®, OrmoCore, and OrmoClad by employing a single writing step technique based on phase mask technology and KrF excimer laser irradiation. All waveguide
Externí odkaz:
https://doaj.org/article/0bd65d1733d94ca59d6cbad5fda4a81b
Autor:
Alexey A. Popov, Marco Rosenkranz, Georg Franze, Peter Kroll, Sebastian Polster, Edwin Kroke, Michael P. M. Jank, Erica Brendler, Maik Gerwig, Abid Shaukat Ali, Ilia Ponomarev, Christine Viehweger, Lothar Frey, David Neubert, Uwe Böhme
Cyclopentasilane (CPS) has been studied as an liquid precursor for the deposition of thin silicon films for printed electronics and related applications. The processing involves a UV‐induced prepolymerization of CPS followed by liquid deposition an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31dd518a69896c9c6bef2097c4d0e01c
https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/15918
https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/15918
Publikováno v:
Advances in Materials Science and Engineering, Vol 2012 (2012)
This paper shows that charge exchange events and dissociation reactions of ions may impact the purity of the ion beam in ion implantation, leading to contamination of the implanted target. Physical relations are derived that explain why unwanted ions
Externí odkaz:
https://doaj.org/article/bba32e51505d417d97ed07166d5f77e4