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pro vyhledávání: '"Lori C. Lenchyshyn"'
Publikováno v:
Japanese Journal of Applied Physics. 33:2329
The photo- and electro-luminescence of strained Si1- x Ge x /Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248d8753836ac147b6f102bf0090bd20
https://doi.org/10.1143/jjap.33.2329
https://doi.org/10.1143/jjap.33.2329
