Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Lori A. Lipkin"'
2
Development of high-current 4H-SiC ACCUFET
Autor: Mrinal K. Das, Ranbir Singh, Doyle Craig Capell, John W. Palmour, Lori A. Lipkin
Publikováno v: IEEE Transactions on Electron Devices. 50:471-478
Planar 4H-SiC accumulation channel field effect transistor (ACCUFET) have been designed, fabricated, and characterized. Detailed design and processing experiments were conducted on relatively large area ACCUFETs to boost their power ratings. A detail
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e5c8fe1b97ce78d15ac8d3df5a32f55
https://doi.org/10.1109/ted.2002.808511
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9
Challenges and State-of-the-Art of Oxides on SiC
Autor: Mrinal K. Das, John W. Palmour, Lori A. Lipkin
Publikováno v: MRS Proceedings. 640
Single crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1a366a76d0e893850be5cc2a73cd7e8
https://doi.org/10.1557/proc-640-h3.1
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10
Design and Process Issues for Silicon Carbide Power DiMOSFETS
Autor: Nelson S. Saks, Sei-Hyung Ryu, Mrinal K. Das, Lori A. Lipkin, Ranbir Singh, John W. Palmour, Anant K. Agarwal
Publikováno v: MRS Proceedings. 640
This paper discusses the design and process issues of high voltage power DiMOSFETs (Double implanted MOSFETs) in 4H-silicon carbide (SiC). Since Critical Field (EC) in 4H-SiC is very high (10X higher than that of a Si), special care is needed to prot
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bef7eba559064d9547e5ac914834e74c
https://doi.org/10.1557/proc-640-h4.5
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