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pro vyhledávání: '"Loretta Shirey"'
Autor:
Orest J. Glembocki, Joshua D. Caldwell, Yan Francescato, Nicholas Sharac, Francisco J. Bezares, Vincenzo Giannini, James P Long, Jeffrey C Owrutsky, Chase Ellis, Joseph Tischler, Igor Vurgaftman, Stefan A. Maier, Thomas Reinecke, Lucas Lindsay, Virginia D. Wheeler, Alexander Giles, Eugene A Imhoff, Loretta Shirey, Nabil Bassim, Richard Kasica
Publikováno v:
ECS Meeting Abstracts. :1548-1548
Silicon carbide is well-known as a high quality wide-band gap semiconductor for use in electronic and optoelectronic applications at high powers, temperatures and radiation environments due to its high breakdown field, wide bandgap, radiation hardnes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084446a29caefca91f784ecd0dbf7396
https://doi.org/10.1149/ma2014-01/41/1548
https://doi.org/10.1149/ma2014-01/41/1548
