Integrated Strategy toward Self-Powering and Selectivity Tuning of Semiconductor Gas Sensors

Autor: Michael Moseler, Francisco Hernández Ramírez, Andreas Waag, Leonhard Mayrhofer, Matin Sadat Mohajerani, Martin W. G. Hoffmann, Olga Casals Guillén, Lorenzo Caccamo, Cristian Fàbrega, Juan Daniel Prades García, Hao Shen, Alaaeldin Gad

Publikováno v: Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname

Inorganic conductometric gas sensors struggle to overcome limitations in high power consumption and poor selectivi-ty. Herein, recent advances in developing self-powered gas sensors with tunable selectivity are introduced. Alternative general approac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c0c0702ae6f49127e2770020ad6924a
https://doi.org/10.1021/acssensors.6b00508

Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography

Autor: Gerry Hamdana, Lorenzo Caccamo, Dominique Mangelinck, Erwin Peiner, Maik Bertke, Marion Descoins, Hartmut Bracht, Tobias Südkamp, Hutomo Suryo Wasisto

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2017, 179, pp.74-82. ⟨10.1016/j.mee.2017.04.030⟩
Microelectronic Engineering, 2017, 179, pp.74-82. ⟨10.1016/j.mee.2017.04.030⟩

International audience; An improved nanofabrication processing technique for realization of vertically aligned silicon nanowires (SiNW5) by colloidal lithography is reported in this work. Microstructure pattern arrays are prepared on the substrate al

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0243f7291f058aeadacded4f2ae053c
https://hal.archives-ouvertes.fr/hal-01694208

Insights into Interfacial Changes and Photoelectrochemical Stability of In(x)Ga(1-x)N (0001) Photoanode Surfaces in Liquid Environments

Autor: Leonhard Mayrhofer, Andreas Waag, Michael Moseler, Sönke Fündling, Andreas Hangleiter, Sònia Estradé, Mahmoud Abdelfatah, Hao Zhou, Heiko Bremers, Giulio Cocco, Gemma Martín, Matin Sadat Mohajerani, Lorenzo Caccamo, Wanja Dziony, G. Lilienkamp, Winfried Daum, Alaaeldin Gad, Francesca Peiró

Publikováno v: ACS applied materialsinterfaces. 8(12)

The long-term stability of InGaN photoanodes in liquid environments is an essential requirement for their use in photoelectrochemistry. In this paper, we investigate the relationships between the compositional changes at the surface of n-type In(x)Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c774e6ff2549e55a44efb305bb97e86e
https://pubmed.ncbi.nlm.nih.gov/26953934

Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting

Autor: Andreas Waag, Johannes Ledig, Cristian Fàbrega, Martin Hoffmann, G. Lilienkamp, Hao Shen, Sònia Estradé, Winfried Daum, Hergo-Heinrich Wehmann, José Manuel Rebled, Alexander Wagner, Francesca Peiró, Lluís López-Conesa, Xue Wang, Lorenzo Caccamo, Jana Hartmann, Joan Daniel Prades

Publikováno v: ACS applied materialsinterfaces. 6(4)

3D single-crystalline, well-aligned GaN-InGaN rod arrays are fabricated by selective area growth (SAG) metal-organic vapor phase epitaxy (MOVPE) for visible-light water splitting. Epitaxial InGaN layer grows successfully on 3D GaN rods to minimize de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1935e8617c45faa963d4e5695fad5a2a
https://pubmed.ncbi.nlm.nih.gov/24517402

Novel approaches towards highly selective self-powered gas sensors

Autor: Andreas Waag, Leonhard Mayrhofer, Lorenzo Caccamo, Francisco Hernandez-Ramirez, Michael Moseler, Cristian Fàbrega, Winfried Daum, Martin W. G. Hoffmann, Hao Shen, G. Lilienkamp, Olga Casals, Alaaeldin Gad, Joan Daniel Prades

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Dipòsit Digital de la UB
Universidad de Barcelona

The prevailing design approaches of semiconductor gas sensors struggle to overcome most of their current limitations such as poor selectivity, and high power consumption. Herein, a new sensing concept based on devices that are capable of detecting ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df67f9b90d005f7d4bac2fab38637a29
http://hdl.handle.net/2445/103443