Výsledky vyhledávání - "Lorenti, Simona"

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Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Autor: Zimbone, Massimo, Piluso, Nicolo, Litrico, Grazia, Nipoti, Roberta, Reitano, Riccardo, Canino, MariaConcetta, Di Stefano, Maria Ausilia, Lorenti, Simona, La Via, Francesco

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the

Externí odkaz: http://arxiv.org/abs/2104.12467

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Thermal Annealing of High Dose P Implantation in 4H-SiC

Autor: Calabretta, Cristiano, Zimbone, Massimo, Barbagiovanni, Eric G., Boninelli, Simona, Piluso, Nico, Severino, Andrea, Di Stefano, Maria A., Lorenti, Simona, Calcagno, Lucia, La Via, Francesco

Publikováno v: Materials Science Forum ISSN: 1662-9752, Vol. 963, pp 399-402 (2019)

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM

Externí odkaz: http://arxiv.org/abs/2104.08882

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Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Autor: Fiorenza, Patrick, Vivona, Marilena, Iucolano, Ferdinando, Severino, Andrea, Lorenti, Simona, Nicotra, Giuseppe, Bongiorno, Corrado, Giannazzo, Filippo, Roccaforte, Fabrizio

Publikováno v: Materials Science in Semiconductor Processing 78 (2018) 38-42

This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The capac

Externí odkaz: http://arxiv.org/abs/1903.08572

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