Zobrazeno 1 - 10
of 300
pro vyhledávání: '"Lopez-Richard V"'
Autor:
Lopez-Richard, V., Pradhan, S., Silva, R. S. Wengenroth, Lipan, O., Catelano, L. K., Höfling, S., Hartmann, F.
Publikováno v:
Journal of Applied Physics 136, 165103 (2024)
Basic multimode impedance analysis grounded in the availability of nonequilibrium charge carriers and their retarded path towards equilibrium is used to access the inadequacy of equivalent circuits in nonlinear systems with inherent memory. On the ba
Externí odkaz:
http://arxiv.org/abs/2303.04135
Autor:
Castro, E. David Guarin, Pfenning, A., Hartmann, F., Knebl, G., Teodoro, M. Daldin, Marques, Gilmar E., Höfling, S., Bastard, G., Lopez-Richard, V.
Publikováno v:
J. Phys. Chem. C 2021, 125, 27, 14741-14750
We investigate the energy relaxation segmentation in a resonant tunneling heterostructures by assessing the optical and transport dynamics of non-equilibrium charge carriers. The electrical and optical properties are analyzed using electronic transpo
Externí odkaz:
http://arxiv.org/abs/2303.03506
Autor:
Laurindo Jr., V., Castro, E. D. Guarin, Jacobsen, G. M., de Oliveira, E. R. C., Domenegueti, J. F. M., Alén, B., Mazur, Yu. I., Salamo, G. J., Marques, G. E., Marega Jr., E., Teodoro, M. D., Lopez-Richard, V.
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at l
Externí odkaz:
http://arxiv.org/abs/2107.02129
Autor:
de Oliveira, E. R. Cardozo, Naranjo, A., Pfenning, A., Lopez-Richard, V., Marques, G. E., Worschech, L., Hartmann, F., Höfling, S., Teodoro, M. D.
Publikováno v:
Phys. Rev. Applied 15, 014042 (2021)
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition
Externí odkaz:
http://arxiv.org/abs/2007.11736
Autor:
Marega E, Liang BL, Mazur Yu, Salamo GJ, Malachias A, Trallero-Giner C, Villegas-Lelovsky L, Teodoro MD, Lopez-Richard V, Calseverino C, Marques GE
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 56 (2011)
Abstract A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effecti
Externí odkaz:
https://doaj.org/article/c7b6e153ab6743e1af126965691ec224
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
de Oliveira, E. R. Cardozo, Pfenning, A., Guarin, E. D., Teodoro, M. D., Santos, E. C., Lopez-Richard, V., Marques, G. E., Worschech, L., Hartmann, F., Höfling, Sven
Publikováno v:
Phys. Rev. B 98, 075302 (2018)
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current change
Externí odkaz:
http://arxiv.org/abs/1806.06757
Publikováno v:
Phys. Rev. B 98, 125301 (2018)
Electronic transport through a material depends on the response to local perturbations induced by defects or impurities in the material. The scattering processes can be described in terms of phase shifts and corresponding cross sections. The multiorb
Externí odkaz:
http://arxiv.org/abs/1804.01826
Autor:
Llorens, J. M., Lopes-Oliveira, V., López-Richard, V., de Oliveira, E. R. Cardozo, Wevior, L., Ulloa, J. M., Teodoro, M. D., Marques, G. E., García-Cristóbal, A., Quiang-Hai, G., Alén, B.
Publikováno v:
Phys. Rev. Applied 11, 044011 (2019)
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the ex
Externí odkaz:
http://arxiv.org/abs/1710.08828