Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Longlai Xu"'
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 3, Pp 251-259 (2021)
Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT
Externí odkaz:
https://doaj.org/article/ed8bb2ec2f9f4f59a6da75c885274b7a
Publikováno v:
IET Circuits, Devices & Systems. 15:251-259
Autor:
Mohamed N. Darwish, Zhang Wenhong, Pan Yin, Longlai Xu, Jun Zeng, Yaohua Wang, Xiaohu Deng, Rui Jin, Kui Pu, Li Li
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
A ultra-high temperature diffusion process with thin oxide layer capped with polysilicon film to get a deep VLD (Variable Lateral Doping) junction edge termination of 4500V trench-gated IGBT platform is presented in this paper. Conventionally, the VL
Autor:
Jun Zeng, Shaohua Dong, Rui Jin, Zhang Wenhong, Mohamed N. Darwish, Yaohua Wang, Kui Pu, Longlai Xu
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In FACTS (Flexible AC Transmission Systems) and VSC-HVDC (Voltage Sourced Converter based High Voltage Direct Current) system, IGBT (Insulated Gate Bipolar Transistor) modules consisted of dozens of IGBT chips are required to achieve huge current cap