Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Longkun Lai"'
Publikováno v:
Electronics Letters, Vol 59, Iss 7, Pp n/a-n/a (2023)
Abstract The need for a high‐frequency and high‐efficiency gallium nitride (GaN)‐based buck converter that can be controlled directly by a low swing pulse width‐modulated (PWM) signal, without the need for additional buffers or preamplifiers,
Externí odkaz:
https://doaj.org/article/fcf539728dff4136a1ac338d99067189
Publikováno v:
Electronics, Vol 9, Iss 1540, p 1540 (2020)
Electronics
Volume 9
Issue 9
Electronics
Volume 9
Issue 9
Integration is a key way to improve the switching frequency and power density for a DC-DC converter. A monolithic integrated GaN based DC-DC buck converter is realized by using a gate driver and a half-bridge power stage. The gate driver is composed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41ab532e398c80e0218e8c31ede53ec7
https://www.mdpi.com/2079-9292/9/9/1540
https://www.mdpi.com/2079-9292/9/9/1540
Autor:
Jingxian Liang, Weijun Luo, Longkun Lai, Xinyu Liu, Yipeng Zhang, Zhang Jie, Jin Xu, Jing Zhang, Zhaokun Zhou
Publikováno v:
Solid-State Electronics. 160:107622
In this paper, the reverse gate leakage current mechanism of ultrathin InAlN/GaN high-electron mobility transistors on Si (1 1 1) substrate which treated with and without surface treatment process is systematically investigated. Current-voltage (I-V)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18596a9d4d78d6356949eaf1168e34c5
https://doi.org/10.1016/j.sse.2019.107622
https://doi.org/10.1016/j.sse.2019.107622