Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Longjie Tian"'
Publikováno v:
IEEE Sensors Journal. 22:13078-13087
Publikováno v:
Chinese Journal of Aeronautics.
Autor:
Yanqiang Yang, Ningfang Song, Yang Pang, Jian Liang, Fu Ma, Zhenyue Liu, Longjie Tian, Hao Zhang
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-14
The verticality of the borehole determines the firmness of the superstructure, so it is very important to measure the verticality of the borehole. However, the existing static manual measurement technology has low efficiency and poor accuracy. To rea
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-7
The scheme of three-self fiber optic gyroscope (FOG) inertial navigation system (INS) has been explored as a potential alternative to provide the desired self-calibration property, and FOG is the main component of the corresponding INS. However, the
Publikováno v:
IEEE Sensors Journal. 20:11350-11356
MEMS inertial measurement unit (MIMU) has widely used in low-cost inertial navigation fields, such as pedestrian navigation system. However, the realization of self-alignment function and high-grade navigation performance are still uprising challenge
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:9872-9876
In this study, we developed bottom-gate thin film transistors (TFTs) using a novel amorphous Al–N co-doped InZnO thin film as an active layer and determined their electrical characteristics. The film achieved high transmittance in the visible regio
Autor:
Longjie Tian, Xiqing Zhang, Yaobin Ma, Ran Li, Jinbao Su, Keqing Ning, Shiqian Dai, Ye Wang, Qi Wang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:1496-1499
In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnet
Autor:
Ye Wang, Xiqing Zhang, Yaobin Ma, Qi Wang, Longjie Tian, Yongsheng Wang, Ran Li, Shiqian Dai, Jinbao Su
Publikováno v:
Journal of Alloys and Compounds. 750:1003-1006
Bottom-gate top-contact thin film transistors (TFTs) with an active layer of N-doped Indium-Zinc-Tin-Oxide (IZTO:N) were prepared and their electrical properties were studied in this paper. The IZTO:N film was deposited on SiO2/Si substrate by radio
Autor:
Ran Li, Longjie Tian, Jinbao Su, Tao Wang, Yongsheng Wang, Qi Wang, Dongzhan Zhou, Yaobin Ma, Shiqian Dai, Ye Wang, Xiqing Zhang
Publikováno v:
Journal of Alloys and Compounds. 745:256-261
The preparation and electrical properties of N-doped ZnSnO (ZTO: N) thin film transistor (TFT) with a staggered bottom-gate structure were studied in this paper. ZTO: N thin film, which served as the active layer of the prepared TFT, was deposited on
Publikováno v:
Materials Letters. 230:132-134
In this work, a Li-doped indium-tin-zinc-oxide (ITZO:Li) thin film transistor was investigated. The ITZO:Li active channel layer was deposited on an SiO2/Si substrate by radio frequency magnetron sputtering at room temperature. The micro structure of