Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Longheng Qi"'
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-9 (2023)
Abstract A prototype of full-color active-matrix micro-light-emitting diode (micro-LED) micro-display with a pixel density of 391 pixel per inch (ppi) using InGaN/AlGaInP heterogeneous integration is demonstrated. InGaN blue/green dual-color micro-LE
Externí odkaz:
https://doaj.org/article/b161bda6b2f74f35a4cf85efcfa5fa65
Autor:
Hadi Tavakkoli, Mingzheng Duan, Xu Zhao, Longheng Qi, Zongqin Ke, null Izhar, Amine Bermak, Yi-Kuen Lee
Publikováno v:
IEEE Sensors Journal. 22:22529-22539
Publikováno v:
Journal of the Society for Information Display. 29:157-165
Publikováno v:
Journal of the Society for Information Display. 29:47-56
Publikováno v:
Photonics Research. 11:109
Full-color micro-LED displays are being widely developed and regarded as a primary option in current microdisplay technologies to fulfill the urgent demands of metaverse applications in the next decade. In this paper, a monolithic full-color micro-LE
Publikováno v:
Proceedings of the International Display Workshops. :157
Publikováno v:
Optics express. 29(7)
In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and a pixe
Publikováno v:
Optics Express. 30:23499
A full-color micro-display via bonding of a InGaN blue/green dual-wavelength light-emitting diode (LED) array and a AlGaInP red LED array is demonstrated. The micro-display has a 120 µm pixel pitch, and each pixel consists of 40 µm × 120 µm red/g
Publikováno v:
Asia Communications and Photonics Conference 2021.
Three hole traps and one electron trap were revealed for InGaN/GaN blue LEDs grown on Si by a combination of DLTS and ICTS. Time-resolved thermal-enhanced emission process of deep hole trap was investigated.
Publikováno v:
Proceedings of the International Display Workshops. :158