Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Longfei Gong"'
Publikováno v:
Applied Mathematical Modelling. 118:272-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9128e6d13c006aebe6d159cf790b2d78
https://doi.org/10.1016/j.apm.2023.01.028
https://doi.org/10.1016/j.apm.2023.01.028
Publikováno v:
Industrial Lubrication and Tribology. 74:1140-1146
Purpose This study aims to reduce the harm of industrial lubricants to consumers. Composite aluminum-based grease (CAG) was prepared, and medical-grade montmorillonite (M-MMT) was used to improve the antiwear performance of the prepared grease. Desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::358aeaebe7603f3744eab33116aa4587
https://doi.org/10.1108/ilt-03-2022-0075
https://doi.org/10.1108/ilt-03-2022-0075
Autor:
Mengmeng Feng, Mingdun Liao, Jichun Ye, Yuheng Zeng, Zhizhong Yuan, Baojie Yan, Yiran Lin, Longfei Gong, Zhixue Wang
Publikováno v:
Solar Energy. 211:753-758
Hydrogenated amorphous silicon (a-Si:H) deposited using plasma-enhanced chemical vapor deposition (PECVD) is used as the passivation layer for p-type multi-crystalline black silicon (p-mc-b-Si) wafers. The effects of deposition conditions on passivat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021df2091cf20c93c40d36125f4af03b
https://doi.org/10.1016/j.solener.2020.10.023
https://doi.org/10.1016/j.solener.2020.10.023
Publikováno v:
Solar Energy Materials and Solar Cells. 139:27-33
Casting technologies of multi-crystalline (mc) silicon ingots in photovoltaic industry are reviewed in this paper and three main types of cast ingots are introduced. Cell efficiency distribution of the three types of ingots, i.e. common mc-silicon in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e645a85a88b860d063be01cd020c5116
https://doi.org/10.1016/j.solmat.2015.03.007
https://doi.org/10.1016/j.solmat.2015.03.007
Publikováno v:
Solar Energy Materials and Solar Cells. 120:289-294
Cell efficiency distribution of mono-like silicon ingot was investigated. And a long low-efficiency tail was found in the efficiency distribution chart, which degraded the cost-effectiveness of this material. Highly spatial resolved photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3550c5b0499ccea89fd17b56aa1c7098
https://doi.org/10.1016/j.solmat.2013.09.020
https://doi.org/10.1016/j.solmat.2013.09.020
Autor:
Laurent Francis, Jean-Pierre Raskin, Bing Dai, Xiaohui Tang, Shuai Zhang, Liang Wu, Longfei Gong, Fengzhen Wang, Da You, Denis Flandre
Publikováno v:
Solar Energy Materials and Solar Cells. 117:225-230
A new technique for the directional solidification growth of multi-crystalline silicon (mc-Si) ingot was developed by GCL-POLY Energy Holdings Ltd. This technique is called as S2 and has been used recently for industrial production. The average conve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de7aec8baf3baab08c058b9de6fc281
https://doi.org/10.1016/j.solmat.2013.06.013
https://doi.org/10.1016/j.solmat.2013.06.013
Autor:
Xinpeng Zhang, Jiahe Chen, Deren Yang, Jan Vanhellemont, Weizhong Xu, Daxi Tian, Xiangyang Ma, Longfei Gong
Publikováno v:
ECS Transactions. 34:1151-1157
The effects of heavy doping of Si on grown-in void size-density distributions and on Flow Pattern Defect (FPD) and Secco Etch Pit Defect (SEPD) density are discussed. Grown-in defects are studied using Scanning Infra Red Microscopy (SIRM) and Secco e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::738d3a80fe1005a1da9a9bf8af27d2b5
https://doi.org/10.1149/1.3567728
https://doi.org/10.1149/1.3567728
Publikováno v:
Applied Physics A. 104:349-355
The distribution and etching rate of flow pattern defects (FPDs) in germanium- doped Czochralski (GCZ) silicon (Si) wafers with light and heavy dopants—either boron (B) or phosphorus (P)—have been investigated. In the lightly doped (both B and P)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6ec20cdaca8966b4f291656aa25cdb
https://doi.org/10.1007/s00339-010-6146-6
https://doi.org/10.1007/s00339-010-6146-6
Publikováno v:
Crystal Research and Technology. 46:10-13
A dislocation-free silicon single crystal doped with 1020 cm-3 germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seed-end and tang-end of the crystal was 8×1019cm-3and 1.6×1020 cm-3, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abc960cdc881789c0b1993c874e56849
https://doi.org/10.1002/crat.201000505
https://doi.org/10.1002/crat.201000505