Optical interconnects based on VCSELs and low-loss silicon photonics

Autor: Matteo Cherchi, Antonio Malacarne, Mikko Karppinen, Mikko Harjanne, Timo Aalto, Christian Neumeyr, Aila Sitomaniemi, Jyrki Ollila

Publikováno v: Aalto, T, Harjanne, M, Karppinen, M, Cherchi, M, Sitomaniemi, A, Ollila, J, Malacarne, A & Neumeyr, C 2018, Optical interconnects based on VCSELs and low-loss silicon photonics . in Optical Interconnects XVIII ., 1053816, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 10538, Optical Interconnects XVIII 2018, San Francisco, United States, 29/01/18 . https://doi.org/10.1117/12.2290710

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarizatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::495a6f3083a4b61a39511973ce98dfaf
https://doi.org/10.1117/12.2290710

Efficient optoelectronic de-embedding for VCSEL intrinsic response extraction

Autor: Bacou, Alexandre, Hayat, Ahmad, Rissons, Angélique, Mollier, Jean-Claude, Lakovlev, Vladimir, Sirbu, Alexei, Kapon, Eli

In this present work, we propose a new method to remove the parasitics contribution to the VCSEL chip response,in order to obtain the intrinsic transmission behavior. It has been observed that the S11 reflection coefficient of the chip is only due to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::72a0e1868d5716000af169397a72d3c6
https://oatao.univ-toulouse.fr/3273/

Design and Fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors

Autor: Slimane Loualiche, Olivier Dehaese, Christophe Labbé, A. Le Corre, Christophe Levallois, Cyril Paranthoen, Hervé Folliot

Publikováno v: Optical and Quantum Electronics
Optical and Quantum Electronics, Springer Verlag, 2006, 38 (4-6), pp.281-291. ⟨10.1007/s11082-006-0029-2⟩
PHASE 2005 Proceedings
International Workshop on PHysics & Applications of SEmiconductor LASERS
International Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1
Optical and Quantum Electronics, 2006, 38 (4-6), pp.281-291. ⟨10.1007/s11082-006-0029-2⟩

International audience; We report on the design and fabrication of a 1.55-μm wavelength Vertical Cavity Surface Emitting Lasers (VCSELs) which consists of two dielectric Bragg mirrors and a InGaAsP-based active region. The dielectric materials are a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a388896b2b5e7f3291cde7def1fb8a48
https://hal.archives-ouvertes.fr/hal-00488026

Laser à cavité verticale accordable en longueur d'onde

Autor: Levallois, Christophe, Le Corre, Alain, Loualiche, Slimane

Publikováno v: JNMO 2004-Recueil des communications
Journées Nationales Microélectronique Optoélectronique (JNMO 2004)
Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, Montpellier, France. p. 207-208

National audience; Le VCSEL accordable, autour de 1,55µm est essentiel pour les réseaux à courtes et moyennes distances multiplexés en longueur d'onde. La zone active du composant est à base de puits quantiques InGaAs/InGaAsP sur substrat InP. P

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::52e64ca880c465b049d7c2da483e53a8
https://hal.archives-ouvertes.fr/hal-00491477

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