A non-defect precursor gate oxide breakdown model.

Autor: Cheung, Kin P.

Publikováno v: Journal of Applied Physics; 6/21/2023, Vol. 133 Issue 23, p1-11, 11p

The Role of Hydrogen in ReRAM.

Autor: Cox HRJ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Sharpe MK; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., McAleese C; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Laitinen M; Department of Physics, University of Jyväskylä, P.O. Box 35, Jyväskylä, FI-40014, Finland., Dulai J; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Smith R; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., England J; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Ng WH; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Buckwell M; Department of Chemical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Zhao L; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Fearn S; Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK., Mehonic A; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Kenyon AJ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Dec; Vol. 36 (52), pp. e2408437. Date of Electronic Publication: 2024 Oct 14.

Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory.

Autor: Lefevre, Gauthier, Dewolf, Tristan, Guillaume, Nicolas, Blonkowski, Serge, Charpin-Nicolle, Christelle, Jalaguier, Eric, Nowak, Etienne, Bernier, Nicolas, Blomberg, Tom, Tuominen, Marko, Sprey, Hessel, Audoit, Guillaume, Schamm-Chardon, Sylvie

Publikováno v: Journal of Applied Physics; 12/28/2021, Vol. 130 Issue 24, p1-8, 8p

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study.

Autor: Pazos, S. M., Boyeras Baldomá, S., Aguirre, F. L., Krylov, I., Eizenberg, M., Palumbo, F.

Publikováno v: Journal of Applied Physics; 5/7/2020, Vol. 127 Issue 17, p1-10, 10p, 6 Graphs

Polarity dependence degradation mechanism of Al2O3 based metal-insulator-metal antifuse.

Autor: Tian, Min, Zhong, Huicai, Li, Li, Wang, Zhigang

Publikováno v: Journal of Applied Physics; 2018, Vol. 124 Issue 24, pN.PAG-N.PAG, 5p, 1 Diagram, 8 Graphs