Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Lok Yi Lee"'
Publikováno v:
ACS Omega, Vol 9, Iss 43, Pp 43447-43452 (2024)
Externí odkaz:
https://doaj.org/article/644d1d4360f848f78614086a5ad6c281
Autor:
LOK YI LEE, XINYI JIANG
Publikováno v:
Ethnographic Praxis in Industry Conference Proceedings. 2021:43-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71fa97941cdb34f845a74bd5554c8c71
https://doi.org/10.1111/epic.12055
https://doi.org/10.1111/epic.12055
Autor:
David J. Wallis, Lok Yi Lee, Menno J. Kappers, Petr Vacek, Fabien Massabuau, Rachel A. Oliver, Roman Gröger, Martin Frentrup
The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21576a3e2b4a8dad9ca914b3c655dddb
https://www.repository.cam.ac.uk/handle/1810/321597
https://www.repository.cam.ac.uk/handle/1810/321597
Autor:
Zhichao Weng, Sebastian C. Dixon, Lok Yi Lee, Colin J. Humphreys, Ivor Guiney, Oliver Fenwick, William P. Gillin
Publikováno v:
Advanced Optical Materials. 10:2270012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e416b6b8fea7da4c9adf92798e20533
https://doi.org/10.1002/adom.202270012
https://doi.org/10.1002/adom.202270012
Autor:
Zhichao Weng, Sebastian C. Dixon, Lok Yi Lee, Colin J. Humphreys, Ivor Guiney, Oliver Fenwick, William P. Gillin
Publikováno v:
Advanced Optical Materials. 10:2101675
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6194abfa47b914553f1142e3ae4e1231
https://doi.org/10.1002/adom.202101675
https://doi.org/10.1002/adom.202101675
Autor:
Lok Yi Lee
Publikováno v:
Materials Science and Technology. 33:1570-1583
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and their widespread usage in lighting can induce significant worldwide electricity savings. To achieve white an...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b46efee4859c9a10c0f1267a0c66ec
https://doi.org/10.1080/02670836.2017.1300726
https://doi.org/10.1080/02670836.2017.1300726
Autor:
Andrew J. Naylor, Duncan N. Johnstone, Chris Lippard, Peter G. Bruce, Lok Yi Lee, Nicole Grobert, Juan G. Lozano, Frank Dillon
Publikováno v:
Chemical Physics Letters. 739:136993
In this work we report a one-pot, fast and facile synthesis of iron sulphide (FeS) nanostructures using a single source precursor and demonstrate potential for applications in battery technology. This synthesis method offers the possibility of tailor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9085f705dea2270f0c0e12ede30a54b
https://doi.org/10.1016/j.cplett.2019.136993
https://doi.org/10.1016/j.cplett.2019.136993
Autor:
P. W. Mitchell, David J. Wallis, Menno J. Kappers, Phil Dawson, Simon Hammersley, Colin J. Humphreys, Lok Yi Lee, David J. Binks, Rachel A. Oliver, Fabien Charles Massabuau, S.-L. Sahonta, Martin Frentrup, Stephen Church, L. J. Shaw
Publikováno v:
Church, S, Hammersley, S, Mitchell, P, Kappers, M J, Lee, L Y, Massabuau, F, Sahonta, S-L, Frentrup, M, Shaw, L J, Wallis, D J, Humphreys, C J, Oliver, A, Binks, D & Dawson, P 2018, ' Effect of stacking faults on the photoluminescence spectrum of zincblende GaN ', Journal of Applied Physics, vol. 123, 185705 . https://doi.org/10.1063/1.5026267
The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic chemical vapour deposition upon 3C-SiC/Si (001) substrates were investigated. Of particular interest was a broad emission band centered at 3.4 eV, with a FWHM of 200 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bec8c7385fa014b67588bf48a7474c6
https://strathprints.strath.ac.uk/79478/1/Church_etal_JAP_2018_Effect_of_stacking_faults_on_the_photoluminescence_spectrum_of_zincblende_GaN.pdf
https://strathprints.strath.ac.uk/79478/1/Church_etal_JAP_2018_Effect_of_stacking_faults_on_the_photoluminescence_spectrum_of_zincblende_GaN.pdf
Autor:
Lok Yi Lee, Martin Frentrup, Petr Vacek, Fabien Massabuau, David J. Wallis, Menno J. Kappers, Rachel A. Oliver
Publikováno v:
Journal of Crystal Growth. 524:125167
Cubic zincblende (zb-)GaN nucleation layers (NLs) grown by MOVPE on 3C-SiC/Si substrates were studied to determine their optimal thickness for subsequent zb-GaN epilayer growth. The layers were characterised by atomic force microscopy, X-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65ddcbbf31324a1a31601721832f0b01
https://doi.org/10.1016/j.jcrysgro.2019.125167
https://doi.org/10.1016/j.jcrysgro.2019.125167