Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Lok Ping Ho"'
Autor:
Muhammad Younas, Chi Xu, Muhammad Arshad, Lok Ping Ho, Shengqiang Zhou, Fahad Azad, Muhammad Javed Akhtar, Shichen Su, Waqar Azeem, Francis C. C. Ling
Publikováno v:
ACS Omega, Vol 2, Iss 12, Pp 8810-8817 (2017)
Externí odkaz:
https://doaj.org/article/2220afd40f494579ba2ed7510b92efa7
Autor:
Tianxiang Lin, Si-Hua Li, Lok-Ping Ho, Andrej Kuznetsov, Ho Nam Lee, Tony Chau, Francis Chi-Chung Ling
Publikováno v:
IEEE Electron Device Letters. 44:578-581
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffa15e3c870421bd8a63525dabac31ee
https://doi.org/10.1109/led.2023.3242296
https://doi.org/10.1109/led.2023.3242296
Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias
Autor:
Lok-Ping Ho, Muhammad Younas, Jon Borgersen, Rao Tahir Ali Khan, Seyed Javad Rezvani, Simone Pollastri, Muhammad Javed Akhtar, Muhammad Nadeem, Dong Huang, Ying-Li Shi, Andrej Kuznetsov, Francis Chi-Chung Ling
Discovering multifunctional materials is of paramount importance for advancing the science and technology. Herein, we report on an optical phenomenon modulated by an electrical process that happened at the metal–ZnO:Cu junction, for which the light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b43c83bc3b2385184a666e55c8b1c13
http://hdl.handle.net/10852/101591
http://hdl.handle.net/10852/101591
Publikováno v:
Acta Physica Polonica A. 136:122-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ce6964ef129cede6caa3541b38115a
https://doi.org/10.12693/aphyspola.136.122
https://doi.org/10.12693/aphyspola.136.122
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:7080-7086
Transparent ZnMgO/ZnO:Ga/c-sapphire hetero-structures with an optical transmittance of 73% in the visible region were fabricated by pulsed laser deposition technique. Bipolar resistive switching is observed in this structure with a simple contact app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854c72283c4771c42905583cfdc42188
https://doi.org/10.1007/s10854-019-01024-6
https://doi.org/10.1007/s10854-019-01024-6
Autor:
Chi Xu, Muhammad Javed Akhtar, Shichen Su, Fahad Azad, Muhammad Arshad, Shengqiang Zhou, Waqar Azeem, Francis Chi-Chung Ling, Lok Ping Ho, Muhammad Younas
Publikováno v:
ACS Omega, Vol 2, Iss 12, Pp 8810-8817 (2017)
ACS Omega
ACS Omega 2(2017), 8810-8817
ACS Omega
ACS Omega 2(2017), 8810-8817
Systematic magnetic, electronic, and electrical studies on the Cu0.04Zn0.96O/Ga0.01Zn0.99O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (CuM+) ions modulate magnetic and resistive states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0ad63edea87308c81b301a3d4ab25c0
https://doaj.org/article/2220afd40f494579ba2ed7510b92efa7
https://doaj.org/article/2220afd40f494579ba2ed7510b92efa7
Autor:
Shichen Su, Andreas Wagner, Chongxin Shan, Muhammad Younas, Lok Ping Ho, Zilan Wang, Francis Chi-Chung Ling, W. Anwand
Publikováno v:
Physica B: Condensed Matter. 480:2-6
ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e4aa58d657a801b38031603d947c6e
https://doi.org/10.1016/j.physb.2015.09.034
https://doi.org/10.1016/j.physb.2015.09.034
Publikováno v:
Physica B: Condensed Matter. 593:412256
Systematic Raman spectroscopic study was conducted on the wurtzite (002) Sb-doped ZnO films grown by pulsed laser deposition with different Sb doping levels and annealed at different temperatures, with the undoped, Cu-doped and Ga-doped ZnO films for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0408832e3355a0ee40a5f1f0755b05f
https://doi.org/10.1016/j.physb.2020.412256
https://doi.org/10.1016/j.physb.2020.412256
Autor:
Hai Zhu, Andrej Yu. Kuznetsov, Shichen Su, Francis Chi-Chung Ling, Andreas Wagner, Fahad Azad, Maik Butterling, Lok-Ping Ho, Wolfgang Anwand, Caiqin Luo
Publikováno v:
Journal of Applied Physics 123(2018)16, 161525
Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8850a3acca1b8209588fed730361ed16
http://hdl.handle.net/10852/67133
http://hdl.handle.net/10852/67133