Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Loizos Efthymiou"'
Autor:
Giorgia Longobardi, Loizos Efthymiou, John Findlay, Andrea Bricconi, Peter Comiskey, Martin Arnold, David Miller, Florin Udrea
Publikováno v:
Power Electronic Devices and Components, Vol 4, Iss , Pp 100028- (2023)
This work provides an overview of the current state of technology in the field of lateral GaN power devices and presents the characteristics of the main commercially available 650 V GaN power devices and ICs. A comparison is given, both in terms of k
Externí odkaz:
https://doaj.org/article/105ba24c17f1491bbbb13c9df8f11f98
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 831-838 (2021)
For large scale testability of p-GaN HEMTs it is essential to investigate threshold voltage ( $\text{V}_{\mathrm{ th}}$ ) instability from the perspective of the measurement induced instability. In this paper the impact of accumulated gate bias stres
Externí odkaz:
https://doaj.org/article/0626343301d54f40849ce31edc300d8d
A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Autor:
Florin Udrea, Martin Arnold, Loizos Efthymiou, Zahid Ansari, Orange Fung, John Findlay, Kaspars Ledins, Giorgia Longobardi
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 831-838 (2021)
For large scale testability of p-GaN HEMTs it is essential to investigate threshold voltage ( $\text{V}_{\mathrm{ th}}$ ) instability from the perspective of the measurement induced instability. In this paper the impact of accumulated gate bias stres
Autor:
Loizos Efthymiou, Florin Udrea, Ayman Shibib, Murukesan Karthick, Kyle Terrill, Giorgia Longobardi
Publikováno v:
IEEE Electron Device Letters. 40:1253-1256
In this letter, we investigate by means of experimental results and TCAD simulations the threshold voltage instability due to OFF-state drain stress in p-GaN gate AlGaN/GaN-on-Si HEMTs. When the drain of the p-GaN HEMT is biased in the OFF-state the
Publikováno v:
IEEE Transactions on Electron Devices. 66:2301-2306
This paper investigates the advantages and disadvantages of bonding pad over active area (BPOA) layout over a conventional layout for lateral AlGaN/GaN HEMTs designed for use in power applications. Extensive analysis of the performance of a BPOA devi
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
In this study we investigate the effect induced by standard transfer characteristic measurement (I D -V G ) which is used to quantify threshold voltage (V th ), on threshold voltage (V th ) itself and a technique to mitigate this effect for a reliabl
Publikováno v:
2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).
The Electric Vehicles market is looking with increasing interest into the possibility of having power electronics systems that adopt wide band gap semiconductors. The training factor is the size and weight reduction of the overall power system that w
Autor:
Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi, Florin Udrea, Evelyn Lin, Terry Chien, Max Chen
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study