Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Lohmann, Mark"'
Autor:
Ersfeld, Manfred, Volmer, Frank, Rathmann, Lars, Kotewitz, Luca, Heithoff, Maximilian, Lohmann, Mark, Yang, Bowen, Watanabe, Kenji, Taniguchi, Takashi, Bartels, Ludwig, Shi, Jing, Stampfer, Christoph, Beschoten, Bernd
Publikováno v:
Spintronics XIII 11470, 114702M (2020)
One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dep
Externí odkaz:
http://arxiv.org/abs/2007.14712
Autor:
Su, Tang, Lohmann, Mark, Li, Junxue, Xu, Yadong, Niu, Ben, Alghamdi, Mohammed, Zhou, Haidong, Cui, Yongtao, Cheng, Ran, Taniguchi, Takashi, Watanabe, Kenji, Shi, Jing
By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with clean and st
Externí odkaz:
http://arxiv.org/abs/2006.10283
Autor:
Mayes, Morgan, Farahmand, Farima, Grossnickle, Maxwell, Lohmann, Mark, Aldosary, Mohammed, Li, Junxue, Aji, Vivek, Shi, Jing, Song, Justin C. W., Gabor, Nathaniel M.
Publikováno v:
PNAS 120 (2023) e2221815120 PNAS 120 (39) e2221815120 120 (39) e2221815120 120 (39) e2221815120 120 (39) e2221815120 120 (39) e2221815120 PNAS. 120 (39) e2221815120
Like air flowing over a wing, optimizing the flow of electronic charge is essential to the operation of nanoscale devices. Unfortunately, the delicate interplay of charge, spin, and heat in complex devices has precluded detailed imaging of charge flo
Externí odkaz:
http://arxiv.org/abs/2002.07902
Autor:
Niu, Ben, Su, Tang, Francisco, Brian A., Ghosh, Subhajit, Kargar, Fariborz, Huang, Xiong, Lohmann, Mark, Li, Junxue, Xu, Yadong, Taniguchi, Takashi, Watanabe, Kenji, Wu, Di, Balandin, Alexander, Shi, Jing, Cui, Yong-Tao
The magnetic properties in two-dimensional van der Waals materials depend sensitively on structure. CrI3, as an example, has been recently demonstrated to exhibit distinct magnetic properties depending on the layer thickness and stacking order. Bulk
Externí odkaz:
http://arxiv.org/abs/1911.12428
Autor:
Ersfeld, Manfred, Volmer, Frank, Rathmann, Lars, Kotewitz, Luca, Heithoff, Maximilian, Lohmann, Mark, Yang, Bowen, Watanabe, Kenji, Taniguchi, Takashi, Bartels, Ludwig, Shi, Jing, Stampfer, Christoph, Beschoten, Bernd
We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe$_2$, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarizatio
Externí odkaz:
http://arxiv.org/abs/1911.11692
Autor:
Alghamdi, Mohammed, Lohmann, Mark, Li, Junxue, Jothi, Palani R., Shao, Qiming, Aldosary, Mohammed, Su, Tang, Fokwa, Boniface, Shi, Jing
Among van der Waals (vdW) layered ferromagnets, Fe3GeTe2 (FGT) is an excellent candidate material to form FGT/heavy metal heterostructures for studying the effect of spin-orbit torques (SOT). Its metallicity, strong perpendicular magnetic anisotropy
Externí odkaz:
http://arxiv.org/abs/1903.00571
Autor:
Lohmann, Mark, Su, Tang, Niu, Ben, Hou, Yusheng, Alghamdi, Mohammed, Aldosary, Mohammed, Xing, Wenyu, Zhong, Jiangnan, Jia, Shuang, Han, Wei, Wu, Ruqian, Cui, Yong-Tao, Shi, Jing
Two-dimensional ferromagnet Cr2Ge2Te6 (CGT) is so resistive below its Curie temperature that probing its magnetism by electrical transport becomes extremely difficult. By forming heterostructures with Pt, however, we observe clear anomalous Hall effe
Externí odkaz:
http://arxiv.org/abs/1903.00569
Autor:
Ortiz, Victor H., Aldosary, Mohammed, Li, Junxue, Xu, Yadong, Lohmann, Mark I., Sellappan, Pathikumar, Kodera, Yasuhiro, Garay, Javier E., Shi, Jing
Publikováno v:
APL Materials 6, 121113 (2018)
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with (001) and
Externí odkaz:
http://arxiv.org/abs/1812.11688
Autor:
Wiedemann, Peter Michael, Kirsch, Fabian, Lohmann, Mark, Böl, Gaby-Fleur, Freudenstein, Frederik
Publikováno v:
In Regulatory Toxicology and Pharmacology December 2022 136
Autor:
Yang, Bowen, Molina, Everardo, Kim, Jeongwoo, Barroso, David, Lohmann, Mark, Liu, Yawen, Xu, Yadong, Wu, Ruqian, Bartels, Ludwig, Watanabe, Kenji, Taniguchi, Takashi, Shi, Jing
Spin-orbit coupling (SOC) in graphene can be greatly enhanced by proximity coupling it to transition metal dichalcogenides (TMDs) such as WSe2. We find that the strength of the acquired SOC in graphene depends on the stacking order of the heterostruc
Externí odkaz:
http://arxiv.org/abs/1806.00501