Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Loh Woon Leng"'
Autor:
Akimov, Yuriy, Eapen, Aswin Alexander, Zhu, Shiyang, Ng, Doris K. T., Li, Nanxi, Loh, Woon Leng, Lee, Lennon Y. T., Gandhi, Alagappan, Anthur, Aravind P.
Publikováno v:
Physical Review A 109, 043514 (2024)
We develop a theoretical predictive model for an all-pass ring resonator that enables the most complete description of linear coupling regimes. The model is based on eigenmode decomposition of Maxwell's equations with full account of the confined and
Externí odkaz:
http://arxiv.org/abs/2402.03869
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aee155f887dd88adca08940702d24cc
https://doi.org/10.1109/eptc56328.2022.10013201
https://doi.org/10.1109/eptc56328.2022.10013201
Autor:
Surya Bhattacharya, David Ho Soon Wee, Eva Wai Leong Ching, Lim Teck Guan, Jong Ming Ching, Loh Woon Leng
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
A FOWLP and a Si-Interposer integration platform for Electronic IC (EIC) and Photonic IC (PIC) are described here. These two platforms are capable to support high-speed integration and scalable design of the next generation Optical Engine. The integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5002c397decbb1f5b166ec098671f5
https://doi.org/10.1109/ectc32696.2021.00050
https://doi.org/10.1109/ectc32696.2021.00050
Autor:
Loh Woon Leng, Ding Liang, Hong Seong Sohn, Tan Kuam Hua, Hua Mao Lin, Steven Lee Hou Jang, John Tracy
Publikováno v:
Solid State Phenomena. 219:225-229
A new generation of negative tone and chemically amplified positive tone photoresists by TOK, JSR, Dow Chemical and others has gained momentum for advanced packaging applications. Resist thickness requirements are increasing to the 40-100 μm range a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eab5165e389bafb64070b4bf4854ece
https://doi.org/10.4028/www.scientific.net/ssp.219.225
https://doi.org/10.4028/www.scientific.net/ssp.219.225
Publikováno v:
2011 IEEE 13th Electronics Packaging Technology Conference.
3D Through-silicon via (TSV) has been acknowledged as one of the future chip design technologies. In this paper, via last after Back End Of Line (BEOL) and before bonding, CMOS wafer with 18 layers of multilayer dielectric dry etching prior to deep s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34b330a806daafcde6b71bc32bb16e6
https://doi.org/10.1109/eptc.2011.6184491
https://doi.org/10.1109/eptc.2011.6184491
Publikováno v:
2015 IEEE 17th Electronics Packaging & Technology Conference (EPTC); 1/1/2015, p1-4, 4p
Akademický článek
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Akademický článek
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Publikováno v:
2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013); 2013, p771-774, 4p
Publikováno v:
2011 IEEE 13th Electronics Packaging Technology Conference; 1/ 1/2011, p600-603, 4p