Failure analysis on non-visible front-end defects in deep NWELL implantation related process

Autor: Loh Sock Khim, Ang Ghim Boon, Ng Hui Peng, Zhao Si Ping, Neo Soh Ping, Chen Changqing, Ng Peng Tiong, Yip Kim Hong, Angela Teo

Publikováno v: Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

In this paper, a low yield case with a specific failing pattern in the wafers and related to a systematic front-end defect in DNWELL from a specific location and structure in the device was discussed. This paper also illustrates and put emphasis on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2ccdc40c621adbba6375bcd4b188d38
https://doi.org/10.1109/ipfa.2013.6599149

Failure analysis of 65nm technology node SRAM soft failure

Autor: E. Er, Wang Qingxiao, J. Teong, S.P. Neo, Loh Sock Khim, Chen changqing

Publikováno v: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

In this paper, a real case of 65 nm technology node SRAM failure was studied. The failure of the SRAM is soft failure, so the traditional method was failed to localize the exact position of the failed transistor. To find the root cause, the biased cu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a051da69ab8691da2fcb421884843e17
https://doi.org/10.1109/ipfa.2008.4588175

Failure analysis approach For TrenchMOS devices.

Autor: Oh Chong Khiam, Yao Yujin, Gao, Anna, Li Yan, Loh Sock Khim, Lim Seng Keat, King Mingchu

Publikováno v: Proceedings of the 20th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2013, p190-195, 6p

Failure analysis of 65nm technology node SRAM soft failure.

Autor: Chen changqing, Er, E., Soh Ping Neo, Loh Sock Khim, Wang Qingxiao, Teong, J.

Publikováno v: 2008 15th International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2008, p1-4, 4p