Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Loh Kean Ping"'
Autor:
Abhay Kumar Mondal, Loh Kean Ping, Muhammad Aniq Shazni Mohammad Haniff, Mohd Arif Mohd Sarjidan, Boon Tong Goh, Mohd Ambri Mohamed
Publikováno v:
ACS Omega, Vol 7, Iss 2, Pp 2252-2259 (2022)
Externí odkaz:
https://doaj.org/article/863f030ce9bf4048b15cc74bb12e1054
Autor:
Loh Kean Ping, Mohd Ambri Mohamed, Abhay Kumar Mondal, Mohamad Fariz Mohamad Taib, Mohd Hazrie Samat, Dilla Duryha Berhanuddin, P. Susthitha Menon, Raihana Bahru
Publikováno v:
Micromachines, Vol 12, Iss 4, p 348 (2021)
The crystal structure, electron charge density, band structure, density of states, and optical properties of pure and strontium (Sr)-doped β-Ga2O3 were studied using the first-principles calculation based on the density functional theory (DFT) withi
Externí odkaz:
https://doaj.org/article/b6d82ef3ded64216a17eabb9d6791d2c
Autor:
Abhay Kumar Mondal, Mohd Ambri Mohamed, Loh Kean Ping, Mohamad Fariz Mohamad Taib, Mohd Hazrie Samat, Muhammad Aniq Shazni Mohammad Haniff, Raihana Bahru
Publikováno v:
Materials, Vol 14, Iss 3, p 604 (2021)
Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. I
Externí odkaz:
https://doaj.org/article/736a4c557d8f41d68cb606bf0fb2bd99
Autor:
Abhay Kumar Mondal, Revathy Deivasigamani, Loh Kean Ping, Muhammad Aniq Shazni Mohammad Haniff, Boon Tong Goh, Ray Hua Horng, Mohd Ambri Mohamed
Publikováno v:
ACS Omega. 7:41236-41245
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f1575c272b057c73b52c8bd92143c6
https://doi.org/10.1021/acsomega.2c04888
https://doi.org/10.1021/acsomega.2c04888
Autor:
Dilla Duryha Berhanuddin, P. Susthitha Menon, Mohd Ambri Mohamed, Loh Kean Ping, Abhay Kumar Mondal
Publikováno v:
Chinese Journal of Physics. 73:195-212
Gallium oxide (Ga2O3) is an ultrawide bandgap semiconducting material that has been developed for many advanced technology and engineering applications and has potential uses in power devices, optoelectronics and sensing applications because of its h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877bc0adfe695081e4d96e9e83fd48d7
https://doi.org/10.1016/j.cjph.2021.06.015
https://doi.org/10.1016/j.cjph.2021.06.015
Autor:
Abhay Kumar, Mondal, Loh Kean, Ping, Muhammad Aniq, Shazni Mohammad Haniff, Mohd Arif, Mohd Sarjidan, Boon Tong, Goh, Mohd Ambri, Mohamed
Publikováno v:
ACS Omega
Alpha (α)- and beta (β)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap rangi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d5315c117c9743c2d71acbb7e2a90250
https://pubmed.ncbi.nlm.nih.gov/35071914
https://pubmed.ncbi.nlm.nih.gov/35071914
Autor:
Dilla Duryha Berhanuddin, P. Susthitha Menon, Mohamad Fariz Mohamad Taib, Abhay Kumar Mondal, Mohd Hazrie Samat, Loh Kean Ping, Raihana Bahru, Mohd Ambri Mohamed
Publikováno v:
Micromachines, Vol 12, Iss 348, p 348 (2021)
Micromachines
Volume 12
Issue 4
Micromachines
Volume 12
Issue 4
The crystal structure, electron charge density, band structure, density of states, and optical properties of pure and strontium (Sr)-doped β-Ga2O3 were studied using the first-principles calculation based on the density functional theory (DFT) withi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::409a674235a855535cd33609bc73ec39
https://www.mdpi.com/2072-666X/12/4/348
https://www.mdpi.com/2072-666X/12/4/348
Autor:
Muhammad Aniq Shazni Mohammad Haniff, Mohd Hazrie Samat, Abhay Kumar Mondal, Mohd Ambri Mohamed, Mohamad Fariz Mohamad Taib, Loh Kean Ping, Raihana Bahru
Publikováno v:
Materials
Volume 14
Issue 3
Materials, Vol 14, Iss 604, p 604 (2021)
Volume 14
Issue 3
Materials, Vol 14, Iss 604, p 604 (2021)
Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2648e845009fda027b28da41123362f