Zobrazeno 1 - 10
of 380
pro vyhledávání: '"Lockwood, D J"'
Autor:
Tsybeskov, L., Alam, M., Hafiz, S. B., Ko, D. -K., Bratkovsky, A. M., Wu, X., Lockwood, D. J.
Publikováno v:
J. Appl. Phys. 128, 134301 (2020)
We show that photoluminescence properties of PbS nanocrystal thin films are directly related to film morphology and nanocrystal density. In densely packed PbS nanocrystal films, low-temperature donor-to-acceptor energy transfer is mainly responsible
Externí odkaz:
http://arxiv.org/abs/2010.02157
Autor:
Barbagiovanni, E. G., Cosentino, S., Lockwood, D. J., Filho, R. N. Costa, Terrasi, A., Mirabella, S.
The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Us
Externí odkaz:
http://arxiv.org/abs/1502.03659
Autor:
Barbagiovanni, E. G., Lockwood, D. J., Rowell, N. L., Filho, R. N. Costa, Berbezier, I., Amiard, G., Favre, L., Ronda, A., Faustini, M., Grosso, D.
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD s
Externí odkaz:
http://arxiv.org/abs/1312.2321
Autor:
Cahay, M., Fairchild, S. B., Grazulis, L., Murray, P. T., Back, T. C., Boolchand, P., Semet, V., Binh, V. T., Wu, X., Poitras, D., Lockwood, D. J., Yu, F., Kuppa, V.
In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the
Externí odkaz:
http://arxiv.org/abs/1107.2547
Publikováno v:
Phys. Rev. B 79, 195318 (2009)
We report exact diagonalization studies of inelastic light scattering in few-electron quantum dots under the strong confinement regime characteristic of self-assembled dots. We apply the orthodox (second-order) theory for scattering due to electronic
Externí odkaz:
http://arxiv.org/abs/0812.3896
Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures
Autor:
Lee, E. -K., Lockwood, D. J., Baribeau, J. -M., Bratkovsky, A. M., Kamins, T. I., Tsybeskov, L.
In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes the dominate
Externí odkaz:
http://arxiv.org/abs/0809.1107
Autor:
Cottam, M. G.1 (AUTHOR) cottam@uwo.ca, Lockwood, D. J.2 (AUTHOR)
Publikováno v:
Scientific Reports. 8/18/2022, Vol. 12 Issue 1, p1-7. 7p.
Publikováno v:
Revista Cubana de Fisica 22 (2005) 142 - 152
In the paper, we present theoretical calculations of the cross section for inelastic light scattering by electronic excitations in a quantum dot charged with 42 electrons. The many-electron states involved in the computations are obtained in the fram
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512583