Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Autor: Marwa Ben Arbia, Badreddine Smiri, Ilkay Demir, Faouzi Saidi, Ismail Altuntas, Fredj Hassen, Hassen Maaref

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2022, 140, pp.106411. ⟨10.1016/j.mssp.2021.106411⟩

The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36c8bd581cf875088c4b05f87c39dafd
https://hdl.handle.net/20.500.12418/13847

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