Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Local lateral uniaxial tensile strain"'
Publikováno v:
In Solid State Electronics 2010 54(9):935-941
Publikováno v:
Solid-State Electronics. 54:935-941
This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4b5b9f6c2bea4ac9a2232e91d8dc728
https://doi.org/10.1016/j.sse.2010.04.037
https://doi.org/10.1016/j.sse.2010.04.037