Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Loai G. Salem"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:742-756
Autor:
Sandeep Reddy Kukunuru, Loai G. Salem
Publikováno v:
2023 IEEE Custom Integrated Circuits Conference (CICC).
Publikováno v:
2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS).
Autor:
Loai G. Salem, M Mahmudul Hasan Sajeeb
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Autor:
Sandeep Reddy Kukunuru, Loai G. Salem
Publikováno v:
2022 IEEE Custom Integrated Circuits Conference (CICC).
Autor:
Loai G. Salem
Publikováno v:
ESSCIRC
This paper presents a widely tunable bandpass filter (BPF) that can autonomously adapt its gain to the power level of signals present within its passband. Similar to outphasing amplifiers, the filter realizes reconfigurable gain by splitting the inpu
Autor:
Loai G. Salem
Publikováno v:
2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper reports the first widely tunable N-path frequency-selective limiter (FSL). Eight stagger-tuned 4-path filters are alternately summed to establish a 4-channel BPF with a steep roll-off between the passband and the stopband. The limiting act
Autor:
Loai G. Salem
Publikováno v:
VLSI Circuits
This paper presents an N-path switched-capacitor rectifier which is capable of realizing staircase conjugate impedance matching, without the use of inductors, to maximize the power transfer from a piezoelectric transducer. Measurements of the 0.18μm
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:35-49
This paper presents a recursive digital low-dropout (RLDO) regulator that improves response time, quiescent power, and load regulation dynamic range over prior digital LDO designs by 1–2 orders of magnitude. The proposed RLDO enables a practical di
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:1719-1738
A fully integrated CMOS power amplifier (PA) that efficiently generates high-voltage RF waveforms directly from a 4.8-V supply using only low-voltage thin-oxide transistors is introduced. High-voltage operation is achieved via implicit ~100% efficien