Zobrazeno 1 - 10
of 484
pro vyhledávání: '"Lloyd Spetz, A."'
Autor:
Bunnfors, Kalle, Abrikossova, Natalia, Kilpijärvi, Joni, Eriksson, Peter, Juuti, Jari, Halonen, Niina, Brommesson, Caroline, Lloyd Spetz, Anita, Uvdal, Kajsa *
Publikováno v:
In Sensors and Actuators: B. Chemical 15 June 2020 313
Publikováno v:
In Surface Science February 2017 656:77-85
Autor:
Fashandi, Hossein, Soldemo, Markus, Weissenrieder, Jonas, Göthelid, Mats, Eriksson, Jens, Eklund, Per, Lloyd Spetz, Anita, Andersson, Mike
Publikováno v:
In Journal of Catalysis December 2016 344:583-590
Autor:
Niina Halonen, Joni Kilpijärvi, Maciej Sobocinski, Timir Datta-Chaudhuri, Antti Hassinen, Someshekar B. Prakash, Peter Möller, Pamela Abshire, Sakari Kellokumpu, Anita Lloyd Spetz
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1871-1877 (2016)
Cell viability monitoring is an important part of biosafety evaluation for the detection of toxic effects on cells caused by nanomaterials, preferably by label-free, noninvasive, fast, and cost effective methods. These requirements can be met by moni
Externí odkaz:
https://doaj.org/article/a565e71df26846ac800fc374942d7793
Autor:
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1800-1814 (2016)
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky jun
Externí odkaz:
https://doaj.org/article/f2c25e2d7d094f46958fda00e9a3e89e
Autor:
Huotari, J., Lappalainen, J., Eriksson, J., Bjorklund, R., Heinonen, E., Miinalainen, I., Puustinen, J., Lloyd Spetz, A.
Publikováno v:
In Journal of Alloys and Compounds 5 August 2016 675:433-440
Autor:
Huotari, J., Cao, W., Niu, Y., Lappalainen, J., Puustinen, J., Pankratov, V., Lloyd Spetz, A., Huttula, M.
Publikováno v:
In Journal of Electron Spectroscopy and Related Phenomena August 2016 211:47-54
Publikováno v:
Proceedings, Vol 56, Iss 1, p 41 (2021)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://doaj.org/article/2b5194aa09db4351a2998dbb5a2954ee
Publikováno v:
Journal of Sensors and Sensor Systems, Vol 4, Iss 1, Pp 1-8 (2015)
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control.
Externí odkaz:
https://doaj.org/article/8936fb7d32f6425083333413786fddfe
Publikováno v:
In Comptes rendus - Chimie July-August 2014 17(7-8):717-724