Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lloyd F. Wright"'
Autor:
Clifford C. Wright, Lloyd F. Wright
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc7d96fba6d6271af8cb1f187d4028f
https://doi.org/10.4271/2001-01-1743
https://doi.org/10.4271/2001-01-1743
Publikováno v:
MRS Proceedings. 203
In the next generation of semiconductor devices, minimum dimensions will be smaller, aspect ratios (height to width) of devices features will be larger, and BPSG dielectrics will be challenged to deal with these changes. A new process, which integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2185098a3b234c49cee2fcdb3b5a6d2d
https://doi.org/10.1557/proc-203-221
https://doi.org/10.1557/proc-203-221
Publikováno v:
MRS Proceedings. 131
Chemical Vapor Deposition (CVD) of thin films for microelectronic devices has historically used source materials that are gases at room temperature [1]. The decision to use gases was largely a practical one based on the relative ease with which the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798acee7d556829df9436a3132d55055
https://doi.org/10.1557/proc-131-319
https://doi.org/10.1557/proc-131-319