Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Lloyd C. Litt"'
Publikováno v:
Photomask Technology.
One of the major challenges for process control is wafer to wafer and lot to lot variation, for the 14nm technology node and beyond. Most of advanced process control (APC) is based on product groups, and different product groups exhibit different amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056861b639685b7a92c5eec3427c7e67
https://doi.org/10.1117/12.2280570
https://doi.org/10.1117/12.2280570
Autor:
Paul van der Vleuten, Arjan Verhappen, Martin Chaplin, Lloyd C. Litt, Jan Pieter Kuijten, Stephan van der Goor, Will Conley, Bryan S. Kasprowicz
Publikováno v:
Microelectronic Engineering. 84:1019-1022
This paper will focus on the process impact of the intentional change in the mask writing grid. Grids ranging from 1nm to 4nm (defined at mask level) were used to investigate the effect on test structures in critical locations. The impact on optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f64c149d420a1a9f9ae5ccf944dc9a4
https://doi.org/10.1016/j.mee.2007.01.140
https://doi.org/10.1016/j.mee.2007.01.140
Autor:
Stephan van der Goor, Martin Chaplin, Arjan Verhappen, Lloyd C. Litt, Will Conley, Paul van der Vleuten, Jan Pieter Kuijten, Bryan S. Kasprowicz
Publikováno v:
Microelectronic Engineering. 84:746-749
A study has been completed to investigate the imaging performance with the industry standard 6% attenuated phase shift mask. Several test structures were used to investigate the effects on line edge roughness (LER) based on the polarization state of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e010efbd5e3b925e3a0e3421403836cc
https://doi.org/10.1016/j.mee.2007.01.126
https://doi.org/10.1016/j.mee.2007.01.126
Publikováno v:
SPIE Proceedings.
Aerial image measurement is a key technique for model based optical proximity correction (OPC) verification. Actual aerial images obtained by AIMS (aerial image measurement system) or WLCD (wafer level critical dimension) can detect printed wafer wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d4c22b51fa961836e63c2db443fa7c
https://doi.org/10.1117/12.2197025
https://doi.org/10.1117/12.2197025
Autor:
Jan Pieter Kuijten, Scott Warwick, Will Conley, Lloyd C. Litt, Arjan Verhappen, Robert John Socha, Martin Chaplin
Publikováno v:
Microelectronic Engineering. 83:1094-1097
This paper presents the details on the use of dual illumination conditions through double exposure to support the imaging of contact holes through pitch for 65nm node applications. Data generated from a 0.85 NA ArF ASML TWINSCAN(TM) system will be pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6be7be70173f473dc014244456ae2e9d
https://doi.org/10.1016/j.mee.2006.01.168
https://doi.org/10.1016/j.mee.2006.01.168
Autor:
Wei Wu, Kevin Lucas, Pat Cook, Stephen Hsu, Doug Van Den Broeke, Chris Progler, Robert John Socha, Will Conley, Stefan van de Goor, Erika Schaefer, Arjan Verhappen, Kurt E. Wampler, Bernie Roman, Thomas Laidig, Bryan S. Kasprowicz, Jan Pieter Kuijten, Lloyd C. Litt
Publikováno v:
Microelectronic Engineering. :393-397
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::397e1b59e672fdb603829ab0f688bd3c
https://doi.org/10.1016/j.mee.2004.12.051
https://doi.org/10.1016/j.mee.2004.12.051
Publikováno v:
SPIE Proceedings.
Historical data indicates reticle write times are increasing node-to-node. The cost of mask sets is increasing driven by the tighter requirements and more levels. The regular introduction of new generations of mask patterning tools with improved perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2bb43e933e6a1df1381411b6ce6755
https://doi.org/10.1117/12.2076771
https://doi.org/10.1117/12.2076771
Autor:
Lloyd C. Litt, Martin Tschinkl, Thomas Thaler, Peter Philipp, Guoxiang Ning, Paul Ackmann, Kristian Schulz, Stefan Meusemann
Publikováno v:
SPIE Proceedings.
Reticle critical dimension uniformity (CDU) is one of the major sources of wafer CD variations which include both inter-field variations and intra-field variations. Generally, wafer critical dimension (CD) measurement sample size interfield is much l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9667e6611246e42218f966934c360e8
https://doi.org/10.1117/12.2066173
https://doi.org/10.1117/12.2066173
Autor:
Dongqing Zhang, Yee Mei Foong, Lloyd C. Litt, Jacky Cheng, Paul Ackmann, Guoxiang Ning, Sergey Kropinov
Publikováno v:
SPIE Proceedings.
A robust optical proximity correction (OPC) model must include process variation to be effective in volume manufacturing. Often, calibration of an OPC model is based on data from a single scanner. However, scanner and mask three dimension (3D) effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4d79ebf8413abab31ebbc5ff0e43ff
https://doi.org/10.1117/12.2044779
https://doi.org/10.1117/12.2044779
Publikováno v:
Microelectronic Engineering. :97-101
Traditional methods of making tool selections for semiconductor manufacturing facilities tend to focus on minimizing equipment capital costs or minimizing wafer costs. A model that comprehends the effects of tool performance, product specifications,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6291ffb61ea8140afadbf69ccc8b66d3
https://doi.org/10.1016/s0167-9317(98)00021-5
https://doi.org/10.1016/s0167-9317(98)00021-5