Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Ljubo Radic"'
Publikováno v:
IRPS
In this paper, we present aging models to describe degradation in LDMOS transistors covering the full V GS /V DS space that the devices see during operation. Three distinct regions are identified that require dedicated modelling: low V GS (off-state)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6361b5a745ea9c0685336a62554605e
https://doi.org/10.1109/irps46558.2021.9405135
https://doi.org/10.1109/irps46558.2021.9405135
Autor:
Vishnu Khemka, Tanuj Saxena, Qin Ganming, Bernhard H. Grote, Saumitra Raj Mehrotra, Tania Tricia-Marie Thomas, Gibson Mark Edward, Ljubo Radic
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents the silicon demonstration of a novel Trench MOSFET with ultra-low specific on-resistance Ron*A. With drain and source contact placement at the top silicon surface, our device combines the benefits of vertical current flow as lever
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b4b5fab790dfb4a5aacf59c221473d
https://doi.org/10.1109/ispsd46842.2020.9170198
https://doi.org/10.1109/ispsd46842.2020.9170198
Publikováno v:
Materials Science in Semiconductor Processing. 10:1-5
B-doped Si 0.77 Ge 0.23 of various surface-doping levels was used to investigate the evolution of implant damage and the corresponding transient enhanced diffusion of boron as a function of boron concentration. These layers were implanted with a non-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a31203453814ccdcf694446bf1bf24
https://doi.org/10.1016/j.mssp.2007.01.002
https://doi.org/10.1016/j.mssp.2007.01.002
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper demonstrates a new phenomenon for the state-of-the-art ultra-high density trench power MOSFET: channel conduction during dynamic avalanche even when gate voltage is well below the nominal threshold voltage. In particular, a comprehensive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1e7f4ecd487bf33491ea894e1f158b
https://doi.org/10.1109/ispsd.2013.6694413
https://doi.org/10.1109/ispsd.2013.6694413
Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques
Publikováno v:
Applied Physics Letters. 81:2244-2246
In this work, a series of 13 boron implants were performed into Czochralski silicon substrates with doses of 2×1014–1.6×1015 cm−2 at energies of 10–80 keV. The boron was deliberately clustered with a 750 °C anneal of 10 or 30 min and the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45627bd75d049861a17c4c747a820609
https://doi.org/10.1063/1.1508438
https://doi.org/10.1063/1.1508438
Publikováno v:
Applied Physics Letters. 81:826-828
Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5323c760774d2d2693eedbafeb8acac6
https://doi.org/10.1063/1.1496505
https://doi.org/10.1063/1.1496505
Autor:
Qizhi Liu, James W. Adkisson, Peng Cheng, John J. Ellis-Monaghan, Mattias E. Dahlstrom, John J. Pekarik, Renata Camillo-Castillo, Peter B. Gray, Bjorn Zetterlund, David L. Harame, Ljubo Radic
Publikováno v:
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper, we investigate the emitter resistance R e in SiGe HBTs with speeds up to 280GHz, using a U-shaped polysilicon emitter. We observed that R e increased with lateral scaling, thereby degrading f T . Although a negligible component in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ba8ac16f21d740f73f70f6457fb3b1
https://doi.org/10.1109/bctm.2011.6082770
https://doi.org/10.1109/bctm.2011.6082770
Autor:
M. Klimov, J. Liu, Valentin Craciun, Phillip E. Thompson, Kevin S. Jones, R. T. Crosby, Ljubo Radic, Mark E. Law
Publikováno v:
MRS Proceedings. 810
The relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd7d018080a8d4a765bd89b17f0da0b5
https://doi.org/10.1557/proc-810-c7.4
https://doi.org/10.1557/proc-810-c7.4
Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI)
Publikováno v:
Web of Science
The effect of boron concentration on boron-interstitial cluster (BIC) dissolution was studied in separation by implantation of oxygen (SIMOX) and SOITEC silicon-on- insulator (SOI) materials. SOI substrates having surface silicon thickness of 750 Å
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e3e4d927ce7b9813d26c6308ecef33
https://doi.org/10.1557/proc-810-c8.11
https://doi.org/10.1557/proc-810-c8.11
Publikováno v:
MRS Proceedings. 810
Our experiments show boron-interstitial cluster dissolution is reduced during oxidation, a behavior not predicted by the current models. Both our experiments and others on the time dependence indicate the reactivation is coming from more than one clu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24657c918816e33bbe29d362c87b2d18
https://doi.org/10.1557/proc-810-c8.14
https://doi.org/10.1557/proc-810-c8.14