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Akademický článek

9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage

Autor: Chenjie Jiang, Junqi Wen, Siyu Meng, Kepu Fu, Changquan Xia, Haitao Chen, Qinyu Qian, Liwen Cheng

Publikováno v: Electronics Letters, Vol 60, Iss 17, Pp n/a-n/a (2024)

Abstract With the development of processes and reduction of transistor size, transistor sensitivity to voltage changes has increased. Traditional SRAM bit cells struggle to function properly at low voltages, and the lengthy write time necessitated by

Externí odkaz: https://doaj.org/article/1cf1f81d74ea4438acb790b7157a5af1

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Akademický článek

Narrow-Strip Single-Longitudinal-Mode Laser Based on Periodic Anodes Defined by i-Line Lithography

Autor: Feng Gao, Li Qin, Yong-Yi Chen, Peng Jia, Chao Chen, Liwen Cheng, Hong Chen, Lei Liang, Yu-Gang Zeng, Xing Zhang, Yong-Qiang Ning, Li-Jun Wang

Publikováno v: IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-10 (2018)

A low-cost regrowth-free narrow-strip single-longitudinal-mode diode laser, based on periodic anodes defined only by i-line lithography is proposed. With the periodic anodes separated by surface insulated grooves acting as a 44th-order gain grating,

Externí odkaz: https://doaj.org/article/f82d82f1a9594007884bc7ff96da1a34

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Akademický článek

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Autor: Liwen Cheng, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, Shun Yao

Publikováno v: Nanomaterials, Vol 11, Iss 8, p 2070 (2021)

An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative a

Externí odkaz: https://doaj.org/article/870de1af33ae408484e85f796a1b5dd1

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Compact beam shaping design based on polarization plane multiplexing of semiconductor lasers

Autor: Liwen Cheng, Yuzhong Luo, Qinyu Qian, Shudong Wu, Haitao Chen

Publikováno v: Applied optics. 61(30)

Fiber coupling is difficult due to the uneven beam parameter product between the vertical and horizontal axes of semiconductor lasers. A beam shaping technique based on the combination of the internal total reflection and polarization surface of a st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39749bc765878f1415482d7eb7bd8109
https://pubmed.ncbi.nlm.nih.gov/36607028

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A broadband and polarization-independent metasurface perfect absorber for hot-electron photoconversion

Autor: Qinyu Qian, Peiqing Sun, Cheng Zhang, Tingting Liu, Haitao Chen, Fan Li, Liwen Cheng, Liang Zhao, Xiaofeng Li, Chinhua Wang

Publikováno v: Nanoscale. 14(39)

We report an ultra-broadband metasurface perfect absorber from the UV to NIR region based on TiN nanostructures. A polarization-independent experimental average absorption of 0.900 (0.921 in simulation) at the wavelength band from 300 nm to 1500 nm i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::581ed6362ce94612620a76abefda1d8c
https://pubmed.ncbi.nlm.nih.gov/36193682

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Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field-effect transistors with planar microcavity

Autor: Qiaoxia Gong, Wenbo Zhang, Jiuru He, Fengying Ma, Li Song, Liwen Cheng, Jun Zhang, Lijun Wang, Yongsheng Hu

Publikováno v: Optics Express. 31:2480

Organic light-emitting field-effect transistors (OLEFETs) are regarded as an ideal device platform to achieve electrically pumped organic semiconductor lasers (OSLs). However, the incorporation of a high-quality resonator into OLEFETs is still challe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba89f2f0e033e1e6204eee66afd1e409
https://doi.org/10.1364/oe.479422

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