Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Liuhui Lei"'
Autor:
Liuhui Lei, Wei Dou, Xiaomin Gan, Jia Yang, Wei Hou, Xing Yuan, Weichang Zhou, Dongsheng Tang
Publikováno v:
Results in Physics, Vol 51, Iss , Pp 106764- (2023)
Coprous thiocyanate (CuSCN)-based thin-film transistors (TFTs) by solution-processed chitosan electrolyte are fabricated on glass substrates. Such TFTs show a low operation voltage of −2.0 V due to the large specific gate capacitance of 7.65 μF/cm
Externí odkaz:
https://doaj.org/article/458b931fbf0a4a48a2a779ceba331483
Autor:
Xiaomin Gan, Wei Dou, Wei Hou, Xing Yuan, Liuhui Lei, Yulan Zhou, Jia Yang, Diandian Chen, Weichang Zhou, Dongsheng Tang
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2345 (2023)
Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of co
Externí odkaz:
https://doaj.org/article/497f47bc46fc4fdc88f574a55d5a5655
Autor:
Wei Hou, Wei Dou, Liuhui Lei, Xing Yuan, Xiaomin Gan, Jia Yang, Diandian Chen, Dongsheng Tang
Publikováno v:
IEEE Transactions on Electron Devices. :1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57af187995c165dfb605a620c1ad09a7
https://doi.org/10.1109/ted.2023.3278616
https://doi.org/10.1109/ted.2023.3278616
Autor:
Guanggang Jiang, Wei Dou, Xiaomin Gan, Liuhui Lei, Xing Yuan, Wei Hou, Jia Yang, Weichang Zhou, Dongsheng Tang
Publikováno v:
Applied Physics Letters. 122
Low-voltage electric-double-layer (EDL) p-channel Mg-doped CuI thin-film-transistors (TFTs) have been fabricated on glass substrates at low temperatures. Electrical properties of the solution-processed CuI TFTs with different Mg doping concentrations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f98d732c2cfcb3f6c8b74a305862d3f
https://doi.org/10.1063/5.0152445
https://doi.org/10.1063/5.0152445
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efb94cccf482b28f96e129772aa5f327
https://doi.org/10.1002/pssr.202200480
https://doi.org/10.1002/pssr.202200480
Autor:
Wei Dou, Shenyi Deng, Sizhe Zeng, Jiale Zhang, Dongsheng Tang, Liuhui Lei, Yongkang Wang, Yuanyuan Tan, Weichang Zhou, Xing Yuan, Haoting Guo
Publikováno v:
RSC Advances. 11:17910-17913
Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29245d36c4dcfac78c6b796944eeab2
https://doi.org/10.1039/d1ra02155a
https://doi.org/10.1039/d1ra02155a
Autor:
Liuhui, Lei, Yuanyuan, Tan, Xing, Yuan, Wei, Dou, Jiale, Zhang, Yongkang, Wang, Sizhe, Zeng, Shenyi, Deng, Haoting, Guo, Weichang, Zhou, Dongsheng, Tang
Publikováno v:
RSC advances. 11(29)
Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6444dbfd2f43560e00fa88575bac788a
https://pubmed.ncbi.nlm.nih.gov/35480189
https://pubmed.ncbi.nlm.nih.gov/35480189
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:115003
Flexible transparent junctionless thin film transistors gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated onto PET substrates at room temperature. These devices exhibit high-performance n-type transistor char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53e4bb71f0bc8a79962d4f76c73758ed
https://doi.org/10.1149/2162-8777/ac3445
https://doi.org/10.1149/2162-8777/ac3445
Autor:
Liuhui Lei, Jiale Zhang, Sizhe Zeng, Wei Dou, Dongsheng Tang, Weichang Zhou, Yongkang Wang, Xing Yuan, Haoting Guo, Shenyi Deng, Yuanyuan Tan
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:045004
Junctionless Low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) gated by solution-processed chitosan dielectric have been fabricated on paper substrate. The operating voltage is found to be as low as 1.0 V due to the large gate spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4052afe7d9729b40e79cd278ce74b2b
https://doi.org/10.1149/2162-8777/abf518
https://doi.org/10.1149/2162-8777/abf518
Autor:
Xing Yuan, Yuanyuan Tan, Liuhui Lei, Wei Dou, Jiale Zhang, Yongkang Wang, Sizhe Zeng, Shenyi Deng, Haoting Guo, Weichang Zhou, Dongsheng Tang
Publikováno v:
ECS Journal of Solid State Science & Technology; Apr2021, Vol. 10 Issue 4, p152-155, 4p