Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Liudmila Vlasukova"'
Publikováno v:
Results in Optics, Vol 17, Iss , Pp 100750- (2024)
It has been shown that Sn implantation with subsequent annealing in air leads to an increase in the electroluminescence (EL) intensity of SiO2/Si structure by two orders of magnitude. Intense violet EL with a maximum at 3.21 eV was observed at room t
Externí odkaz:
https://doaj.org/article/09e0b3fda593438abb8da7f2f3ee92fc
Autor:
Irina N. Parkhomenko, Dmitry V. Shestovski, Sergey A. Demidovich, I. A. Romanov, Uladzimir A. Pilipenka, Vitali A. Saladukha, N. S. Kovalchuk, Liudmila Vlasukova
Publikováno v:
Journal of the Belarusian State University. Physics. :26-31
Emission of the silicon oxide films grown on Si by wet thermal oxidation at 900 °С and by plasma-enhanced chemical vapor deposition from the SiH4 + N2O mixture at 350 °С has been compared using electroluminescence. The electroluminescence spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522594c62dc2cf913c3d723651c537d8
https://doi.org/10.33581/2520-2243-2021-3-26-31
https://doi.org/10.33581/2520-2243-2021-3-26-31
Autor:
Aiman Akylbekovа, Sholpan Giniyatova, Abdirash Akilbekov, A. Seitbayev, Artem Kozlovskiy, Liudmila Vlasukova, Z. Baimukhanov, Zhakyp T. Karipbayev, Alma Dauletbekova, A. B. Usseinov
Publikováno v:
Radiation Measurements. 125:52-56
ZnO nanoclusters obtained by electrochemical deposition (ECD) of zinc in track template a-SiO2/Si-n have been studied. The structure SiO2/Si was irradiated at DC-60 cyclotron with 200 MeV Xe ions (Φ = 108 ions/cm2) with subsequent chemical etching i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1543ccd1dcb74b7f8150710b217ab6
https://doi.org/10.1016/j.radmeas.2019.04.001
https://doi.org/10.1016/j.radmeas.2019.04.001
Autor:
Liudmila Vlasukova, F. F. Komarov, A. K. Togambayeva, M. A. Makhavikou, O. V. Milchanin, Irina N. Parkhomenko, Olga V. Korolik, I. A. Romanov, Jerzy Żuk, Elke Wendler
Publikováno v:
Surface and Coatings Technology. 355:328-332
ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn + and Se + ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::931dc18fdc63f5919680b0549490a214
https://doi.org/10.1016/j.surfcoat.2019.06.043
https://doi.org/10.1016/j.surfcoat.2019.06.043
Autor:
Arno Janse van Vuuren, J.H. Neethling, Liudmila Vlasukova, Oleg Milchanin, Elke Wendler, V.A. Skuratov, Maxim Makhavikou, Alma Dauletbekova, F. F. Komarov, Iryna Parkhomenko, Jerzy Zuk
Publikováno v:
SSRN Electronic Journal.
Till now, shape elongation phenomenon was observed predominantly for metal nanoparticles irradiated with swift heavy ions (SHI). For the first time, we report the shape elongation of InAs and Zn(core)/ZnO(shell) nanoparticles (NPs) embedded in a sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::defe44f596ee81b371f6e8cdb04f4fbb
https://doi.org/10.2139/ssrn.3859736
https://doi.org/10.2139/ssrn.3859736
Autor:
F. F. Komarov, M. A. Makhavikou, Irina N. Parkhomenko, Elke Wendler, I. A. Romanov, Jerzy Żuk, Olga V. Korolik, A. K. Togambayeva, Liudmila Vlasukova, O. V. Milchanin
Publikováno v:
Surface and Coatings Technology. 344:596-600
ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn+ and Se+ ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdcc29b3521f98911db478a1b8d6e0c6
https://doi.org/10.1016/j.surfcoat.2018.03.017
https://doi.org/10.1016/j.surfcoat.2018.03.017
Autor:
Irina N. Parkhomenko, Gennadiy A. Uryev, Alexander S. Kamyshan, Renata R. Nemkaeva, Liudmila Vlasukova, F. F. Komarov, Alexander E. Murzich
Publikováno v:
Doklady of the National Academy of Sciences of Belarus. 62:24-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd0f5ee7e7da856a83759288faa929e
https://doi.org/10.29235/1561-8323-2018-62-1-24-32
https://doi.org/10.29235/1561-8323-2018-62-1-24-32
Autor:
Gennadii D. Ivlev, Vladimir V. Pilko, Irina N. Parkhomenko, Yonder Berencén, Dmitrii V. Zhigulin, Liudmila Vlasukova, F. F. Komarov, I. A. Romanov, Nikita S. Nechaev, A. F. Komarov, Elke Wendler
Publikováno v:
Vacuum. 178:109434
Structural and absorption properties of Te-implanted silicon layers after pulsed laser melting, equilibrium furnace annealing and rapid thermal annealing were examined and compared. The advantage of laser annealing in the formation of absorbing silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6264d3bddf0883c899f45a288b0eb
https://doi.org/10.1016/j.vacuum.2020.109434
https://doi.org/10.1016/j.vacuum.2020.109434
Autor:
Alma Dauletbekova, Abdirash Akilbekov, Aiman Akylbekova, Z. Baimukhanov, Abai Usseinov, A. Seitbayev, Liudmila Vlasukova, Artem Kozlovskyi, Sholpan Giniyatova
Publikováno v:
physica status solidi (b). 256:1800408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10e068cd662cd7f7fedf89dd6d3770ad
https://doi.org/10.1002/pssb.201800408
https://doi.org/10.1002/pssb.201800408
Publikováno v:
Vacuum. 78:119-122
Implantation of N ions with doses of 3 × 1 0 16 and 3 × 1 0 17 cm - 2 and energies of 100 keV into semiinsulating (1 0 0) GaAs substrates has been performed in order to synthesize the GaN compound. The samples have been annealed in a furnace at 750
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba8575c5ddb396226a0a407141deff1
https://doi.org/10.1016/j.vacuum.2005.01.013
https://doi.org/10.1016/j.vacuum.2005.01.013