Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Liudmila I. Fedina"'
Autor:
Alexander V. Latyshev, Dmitry Sheglov, D. I. Rogilo, Sergey Ponomarev, Liudmila I. Fedina, S. V. Sitnikov
Publikováno v:
Applied Surface Science. 540:148269
Using in situ reflection electron microscopy and ex situ atomic force microscopy, we have studied the morphological stability of large-scale (~10–100 μm) Si(1 1 1)-7 × 7 terraces during silicon growth and etching by oxygen and selenium. On the la
Autor:
Se Ahn Song, Youn Joong Kim, Alexander V. Latyshev, Anton K. Gutakovskii, Young-Min Kim, Hionsuck Baik, Liudmila I. Fedina
Publikováno v:
Advanced Materials Research. :1195-1198
Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV
Autor:
Yu. A. Minakov, Liudmila I. Fedina, D. V. Marin, S. A. Kochubei, Alexey A. Popov, Efremov, Vladimir A. Volodin, Anton K. Gutakovskii, V. N. Ulasyuk
Publikováno v:
Solid State Phenomena. :29-34
Autor:
Liudmila I. Fedina
Publikováno v:
Defect and Diffusion Forum. :21-36
Autor:
Anton K. Gutakovskii, Vladimir A. Volodin, S. A. Kochubei, V. V. Bolotov, A. V. Kretinin, Efremov, Liudmila I. Fedina
Publikováno v:
Solid State Phenomena. :681-686
Autor:
A. V. Vishnyakov, O.K. Shabanova, V. V. Bolotov, Liudmila I. Fedina, D.I. Bragin, Efremov, Vladimir A. Volodin, S. A. Kochubei
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
Autor:
A.A. Gutakovskij, Liudmila I. Fedina, S. A. Kochubei, V. V. Bolotov, Vladimir A. Volodin, Efremov
Publikováno v:
Solid State Phenomena. :507-512
Publikováno v:
Journal of nanoscience and nanotechnology. 12(11)
The SiO(x) films of various stoichiometries deposited on Si substrates with the use of the co-sputtering from two separate Si and SiO2 targets were annealed by femtosecond laser pulses. Femtosecond laser treatments were applied for crystallization of
Publikováno v:
Journal of Physics: Condensed Matter. 8:273-286
The solid-phase crystallization process in thin amorphous silicon films on glass substrates was studied with application of excimer laser annealing (ELA) and rapid thermal annealing (RTA) for stimulation of nucleation. Use of ELA allowed us to create
Autor:
Yu. A. Minakov, Vladimir A. Volodin, Alexey A. Popov, A. A. Gutakovskii, M. D. Efremov, Liudmila I. Fedina, D. V. Marin, S. A. Kochubei, V. N. Ulasyuk
Publikováno v:
Technical Physics Letters. 29:569-571
Polycrystalline silicon films on polyimide substrates were obtained by a method based on the crystallization of amorphous films under the impact of nanosecond pulses of excimer laser radiation. Characteristics of the film structure were studied by me