Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Liubing Wang"'
Autor:
Liubing Wang, Fujun Xu, Jing Lang, Jiaming Wang, Lisheng Zhang, Xueqi Guo, Chen Ji, Xiangning Kang, Xuelin Yang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 2, Pp 1-5 (2023)
Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that the thin p-AlGaN/p-GaN
Externí odkaz:
https://doaj.org/article/770b5e61d864403a93f99d0622c83d7a
Publikováno v:
Materials, Vol 13, Iss 22, p 5110 (2020)
Uniaxial tension tests were performed for amorphous SiO2 nanowires using molecular dynamics simulation to probe the size effect on the mechanical properties and plastic deformation by varying the length of nanowires. The simulation results showed tha
Externí odkaz:
https://doaj.org/article/de96be83a71a44db94d81bb455466ec6
Autor:
Jiaming Wang, Fujun Xu, Jing Lang, Xuzhou Fang, Liubing Wang, Xueqi Guo, Chen Ji, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v:
CrystEngComm. 24:4251-4255
Surface kinetics in Al-rich AlGaN growth are regulated to realize a growth window allowing a higher rate as well as a lower temperature. Hence a rate of 2.3 μm h−1 at 1050 °C is achieved for n-Al0.55Ga0.45N with the typical step-terrace morpholog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b8cb36639a1003c2d159a7075d10e3
https://doi.org/10.1039/d2ce00362g
https://doi.org/10.1039/d2ce00362g
Autor:
Liubing Wang, Fujun Xu, Jing Lang, Jiaming Wang, Lisheng Zhang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Xiangning Kang, Ning Tang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen
Publikováno v:
Japanese Journal of Applied Physics. 62:030904
We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8e3a98a918da3e0f81b3e1472de618
https://doi.org/10.35848/1347-4065/acbf14
https://doi.org/10.35848/1347-4065/acbf14
Autor:
X. Z. Fang, Jing Lang, Liubing Wang, Nan Xie, Baiyin Liu, Weikun Ge, Na Zhang, Zhixin Qin, Jiaming Wang, Fujun Xu, Xinqiang Wang, Bo Shen, Xuelin Yang, Xiangning Kang, Yuanhao Sun
Publikováno v:
CrystEngComm. 23:1201-1206
Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe81db066fc4eb2a235027d24b77a7c
https://doi.org/10.1039/d0ce01491e
https://doi.org/10.1039/d0ce01491e
Autor:
Shan Wu, Xuelin Yang, Huayang Huang, Zhaohua Shen, Yuanyuan Xue, Han Yang, Liubing Wang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v:
Japanese Journal of Applied Physics. 61:090901
It is empirically well acknowledged that C doping makes GaN high-resistive. However, the detailed doping type and high-resistivity mechanisms of C doped GaN, which are extremely essential for GaN power electronics, still remain unclear. In this work,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b206a3b0d54ce65332ca6e50128f1e6b
https://doi.org/10.35848/1347-4065/ac8535
https://doi.org/10.35848/1347-4065/ac8535
Publikováno v:
2021 IEEE 4th International Electrical and Energy Conference (CIEEC).
With the rapid development of AC-DC hybrid microgrid and the widespread application of power electric components, AC-DC hybrid park micro-grid based on the topology of electric energy router application(EERA) emerged. In this paper, the matching of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d80733ff62876f06529613392a7861
https://doi.org/10.1109/cieec50170.2021.9510248
https://doi.org/10.1109/cieec50170.2021.9510248
Publikováno v:
2021 IEEE 4th International Electrical and Energy Conference (CIEEC).
The scenario analysis technology can generate time-series scenarios with probabilistic characteristics, and the deterministic scenarios describe the uncertainty information of wind power output, which is suitable for power system scheduling problems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adaa461a8cbb36d5256f24a16092e50e
https://doi.org/10.1109/cieec50170.2021.9510992
https://doi.org/10.1109/cieec50170.2021.9510992
Autor:
Zhang, Na, Fujun Xu, Lang, Jing, Liubing Wang, Jiaming Wang, Yuanhao Sun, Baiyin Liu, Xie, Nan, Xuzhou Fang, Xuelin Yang
Hall data for a p-Al0.4Ga0.6N/Al0.67Ga0.33N superlattice layer. The hole concentration in this p-AlGaN superlattice layer is 3.7×1018 cm-3 at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14251fdc7614cc6f68b50aa71a0d6399
Autor:
Baiyin Liu, Fujun Xu, Jiaming Wang, Jing Lang, Liubing Wang, Xuzhou Fang, Xuelin Yang, Xiangning Kang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen
Publikováno v:
Micro and Nanostructures. 163:107141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8cd2700ba909deedac2f26b3a410bb
https://doi.org/10.1016/j.spmi.2021.107141
https://doi.org/10.1016/j.spmi.2021.107141