Zobrazeno 1 - 10
of 1 301
pro vyhledávání: '"Liu Xiangjun"'
Publikováno v:
Youqi dizhi yu caishoulu, Vol 31, Iss 6, Pp 74-88 (2024)
Rock fracture mechanics properties are the intrinsic geo-mechanical basis for determining the effectiveness of reservoir fracturing stimulation. It is of practical significance to clarify the fracture mechanics properties of reservoirs with different
Externí odkaz:
https://doaj.org/article/336f032270894b94a75ffdb453e35fd5
Publikováno v:
陆军军医大学学报, Vol 46, Iss 2, Pp 91-99 (2024)
Objective To establish and compare the characteristics of mouse models of colorectal cancer (CRC) induced by inflammation and gene mutation. Methods Inflammation-induced colorectal cancer mouse model was established using azoxymethane (AOM) combined
Externí odkaz:
https://doaj.org/article/a7d869298b5b48d685f0c9d3a186ad9d
Autor:
Liu Xiangjun, Zhuang Dalin, Xiong Jian, Zhou Yishan, Liu Junjie, Deng Chong, Liang Lixi, Ding Yi, Jian Xuemei
Publikováno v:
Geofluids, Vol 2024 (2024)
To obtain the influence of anisotropy and energy evolution characteristics on wellbore stability, the acoustic and mechanical anisotropy characteristics of shales are studied through various experiments, including scanning electron microscopy, ultras
Externí odkaz:
https://doaj.org/article/585b3a7795ba4e09a56b7f3a449d41ff
Autor:
Sun, Jianshi, Li, Shouhang, Shao, Cheng, Tong, Zhen, An, Meng, Yao, Yuhang, Hu, Yue, Zhu, Xiongfei, Liu, Yifan, Wang, Renzong, Liu, Xiangjun, Frauenheim, Thomas
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperatur
Externí odkaz:
http://arxiv.org/abs/2410.19576
Publikováno v:
Geofluids, Vol 2022 (2022)
In this paper, the mechanical behaviors of different lithological rocks of coal measure strata from Shanxi Formation in the eastern margin of the Ordos Basin, China, were investigated through uniaxial compression tests, and the deformation characteri
Externí odkaz:
https://doaj.org/article/3789a341bc384b6082ce5eb77f1e5dd6
Publikováno v:
Jixie qiangdu, Vol 41, Pp 1454-1459 (2019)
During the process of combined rotor modularization amplification or reduction,due to the size effect,the law of the influence of microcrack expansion on the dynamic performance of the combined rotor with different sizes is not clear.Dimensional anal
Externí odkaz:
https://doaj.org/article/8ad295c6fc2e4b98b992b8b7af3ccd5e
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Xie, Han, An, Meng, Zhang, Chuang, Zhu, Xiongfei, Huang, Chen, Xiong, Yucheng, Liu, Xiangjun
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desire
Externí odkaz:
http://arxiv.org/abs/2406.12187
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, An, Meng, Zhu, Xiongfei, Zhang, Chuang, Chen, Xiangchuan, Xiong, Yucheng, Frauenheim, Thomas, Liu, Xiangjun
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly lim
Externí odkaz:
http://arxiv.org/abs/2406.02874
Autor:
Sun, Jianshi, Liu, Xiangjun, Xiong, Yucheng, Yao, Yuhang, Yang, Xiaolong, Shao, Cheng, Li, Shouhang
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extre
Externí odkaz:
http://arxiv.org/abs/2403.03673
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Chen, Xiangchuan, Liu, Qianqian, Xiong, Yucheng, An, Meng, Liu, Xiangjun
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy dopi
Externí odkaz:
http://arxiv.org/abs/2401.02133