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Autor:
Liu Shiue Shin, 劉學欣
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Current spin polarization and tunneling magnetoresistance (MR) of single and double magnetic tunneling junctions have been calculated within the free electron model by solving rigorously the 3D Schrodinger equation for different bias voltages
Current spin polarization and tunneling magnetoresistance (MR) of single and double magnetic tunneling junctions have been calculated within the free electron model by solving rigorously the 3D Schrodinger equation for different bias voltages
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58662257621591083079
