Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Liu Bai-Yong"'
Publikováno v:
Review of Scientific Instruments. 68:3785-3789
A simple silicon two-dimensional (2D) flow sensor for the measurement of both flow direction and speed is described. By integrating two couples of silicon spreading-resistance temperature (SRT) sensors in two perpendicular directions on the surface o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a2bc8daa1da126bae9ac2c7a877688
https://doi.org/10.1063/1.1148027
https://doi.org/10.1063/1.1148027
Publikováno v:
Vacuum. 42:1080-1081
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80d21466903adeb8ad262fedf0341784
https://doi.org/10.1016/0042-207x(91)91412-h
https://doi.org/10.1016/0042-207x(91)91412-h
Publikováno v:
Acta Physica Sinica. 40:154
The silicon dioxide film of thickness 150? with device quality has been nitrided thermally by conventional long time method and high temperature rapid method. For the films breakdown characteristics and endurance under high field were investigated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5023bb44f1ce1fcbf32f9a3a5c1a1898
https://doi.org/10.7498/aps.40.154
https://doi.org/10.7498/aps.40.154
Publikováno v:
Vacuum. 42:1041
The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiOxNy) films were studied in the present work. For lightly nitrided oxide, the effective electron trap concentration was found to increase rapidly with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08933d5db03fb90d285ad5cdec36c203
https://doi.org/10.1016/0042-207x(91)91268-s
https://doi.org/10.1016/0042-207x(91)91268-s
Publikováno v:
Acta Physica Sinica. 40:289
The microstructure and current transport behavior in the thermally nitrided silicon oxide (SiOxNy) thin films have been studied and a new model is proposed to explain the current transport behavior of the films. In particular, the model includes the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bcfa703702b4efa578845452349fb52
https://doi.org/10.7498/aps.40.289
https://doi.org/10.7498/aps.40.289
Publikováno v:
Acta Physica Sinica. 40:1855
The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiOxNy) films are studied in the present work. It is observed that when the nitridation degree is the lighter, with the increasing of the nirridation time th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb328f6a1615cf2497b3ed5a656e3f7d
https://doi.org/10.7498/aps.40.1855
https://doi.org/10.7498/aps.40.1855
Publikováno v:
Acta Physica Sinica. 40:1846
This paper study the delay of destructive breakdown and its mechanism on SiO2 films by TCE treatment. The result show that the breakdown current capacity increase with increasing the TCE flow-rate, treatment time and temperature, and reducing the oxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dfe2e846e317e16159e26b5b7375ba8
https://doi.org/10.7498/aps.40.1846
https://doi.org/10.7498/aps.40.1846
Publikováno v:
Acta Physica Sinica. 38:376
A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57710dab64b91fdd5a14bc437639a6de
https://doi.org/10.7498/aps.38.376
https://doi.org/10.7498/aps.38.376
Publikováno v:
Acta Physica Sinica. 38:68
The breakdown characteristics of very thin nitrided silicon oxide film have teen exammed. The breakdown mechanism of this film and the factors affecting the breakdown characteristics have been explored. It has been found that the improvement of break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6217425de4f10e211264667aec6dfd
https://doi.org/10.7498/aps.38.68
https://doi.org/10.7498/aps.38.68