Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Liu, Youbao"'
Publikováno v:
In Energy Procedia 2011 13:3078-3082
Publikováno v:
2010 3rd International Conference on Computer Science and Information Technology.
Focusing on the influence of self-heating effect on electrical properties of the SOI device, thermal analysis of the partially depleted (PD) SOI MOSFET with asymmetric source and drain is performed, and temperature distribution and electrostatic pote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727b16c5a3347dff2edeb680bbc69ca3
https://doi.org/10.1109/iccsit.2010.5563530
https://doi.org/10.1109/iccsit.2010.5563530
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
A lumped behavioral model of suspended MEMS is presented in the paper. Suspended MEMS device is decomposed into many basal components, each of which is modeled using the relative movement theory and energy method, and its parameterized model coded in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787fc71ea13c9d40123718b79e196b63
https://doi.org/10.1109/icsict.2006.306435
https://doi.org/10.1109/icsict.2006.306435
Publikováno v:
ICMMT'98. 1998 International Conference on Microwave and Millimeter Wave Technology. Proceedings (Cat. No.98EX106).
A 8-watt power GaAs MESFET, consisting of two 6/spl times/0.5/spl times/2100 /spl mu/m multi-cell FET of about 4.0 W, can be designed and fabricated in a two-way traveling-wave divider/combiner. The synthesizing power transistor can be realized, prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af9448a93f052665afc9dccca8ffbe9
https://doi.org/10.1109/icmmt.1998.768239
https://doi.org/10.1109/icmmt.1998.768239
Publikováno v:
Journal of Semiconductors. 33:115012
To achieve a constant current limit, low power consumption and high driving capability, a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented. The current-limit threshold is dynamically adjusted to achieve a maximum d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b84dd98f1b594c3b7904a08c78e13730
https://doi.org/10.1088/1674-4926/33/11/115012
https://doi.org/10.1088/1674-4926/33/11/115012
Publikováno v:
Journal of Semiconductors. 33:105007
A radiation-hardened-by-design phase-locked loop (PLL) with a frequency range of 200 to 1000 MHz is proposed. By presenting a novel charge compensation circuit, composed by a lock detector circuit, two operational amplifiers, and four MOS devices, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::129819d998cd37bb9e2feae70cbf2166
https://doi.org/10.1088/1674-4926/33/10/105007
https://doi.org/10.1088/1674-4926/33/10/105007
Publikováno v:
Journal of Semiconductors. 32:115017
A novel SEU hardened 10T PD SOI SRAM cell is proposed. By dividing each pull-up and pull-down transistor in the cross-coupled inverters into two cascaded transistors, this cell suppresses the parasitic BJT and source-drain penetration charge collecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a592ff1666e8faac6279fb40628bcab
https://doi.org/10.1088/1674-4926/32/11/115017
https://doi.org/10.1088/1674-4926/32/11/115017
Publikováno v:
Journal of Semiconductors. 32:075006
This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation. In order to improve its radiation tolerant abilities, circuit-level and device- level RHBD (radiation-hardening by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034e0157f21901cecdcac0bf5032c002
https://doi.org/10.1088/1674-4926/32/7/075006
https://doi.org/10.1088/1674-4926/32/7/075006
Publikováno v:
Journal of Semiconductors. 32:075011
A novel 8T single-event-upset (SEU) hardened and high static noise margin (SNM) SRAM cell is proposed. By adding one transistor paralleled with each access transistor, the drive capability of pull-up PMOS is greater than that of the conventional cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f05cbf4c5a084bee9849f05f3e50befa
https://doi.org/10.1088/1674-4926/32/7/075011
https://doi.org/10.1088/1674-4926/32/7/075011
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