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pro vyhledávání: '"Liu, Yicheng Pei"'
Publikováno v:
Crystals; Volume 13; Issue 7; Pages: 1056
In this study, a special triangular defect (TD) was identified on 4H-SiC epitaxial wafers. The morphology and composition characteristics of these special TDs were revealed by Raman, atomic force microscope (AFM), and scanning electron microscope (SE