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pro vyhledávání: '"Liu, Yan Ting"'
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-
Externí odkaz:
http://arxiv.org/abs/2312.14462
Publikováno v:
Phys. Rev. Applied 20, 024032 (2023)
It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which employs the int
Externí odkaz:
http://arxiv.org/abs/2307.15258
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with perpendicular ma
Externí odkaz:
http://arxiv.org/abs/2306.06357
Autor:
Liu, Yan-ting1 (AUTHOR), Wang, Ya-wen1 (AUTHOR), Tu, Chen1 (AUTHOR), Ren, Jian-wen1 (AUTHOR), Huo, Jia1 (AUTHOR), Nan, Xiao-juan1 (AUTHOR), Dou, Jia-hao2 (AUTHOR), Peng, Zi-he2 (AUTHOR), Zeng, Wei-hui1 (AUTHOR) whzeng88@163.com
Publikováno v:
Scientific Reports. 7/15/2024, Vol. 14 Issue 1, p1-8. 8p.
Autor:
Liu, Yan-Ting, Huang, Chao-Chung, Chen, Kuan-Hao, Huang, Yu-Hao, Tsai, Chia-Chin, Chang, Ting-Yu, Pai, Chi-Feng
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and better-perfo
Externí odkaz:
http://arxiv.org/abs/2108.01272
Autor:
Chang, Ting-Yu, Cheng, Chih-Lin, Huang, Chao-Chung, Peng, Cheng-Wei, Huang, Yu-Hao, Chen, Tian-Yue, Liu, Yan-Ting, Pai, Chi-Feng
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spi
Externí odkaz:
http://arxiv.org/abs/2107.07780
Autor:
Liu, Yan-Ting, Chen, Tian-Yue, Lo, Tzu-Hsiang, Tsai, Tsung-Yu, Yang, Shan-Yi, Chang, Yao-Jen, Wei, Jeng-Hua, Pai, Chi-Feng
Publikováno v:
Phys. Rev. Applied 13, 044032 (2020)
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer ha
Externí odkaz:
http://arxiv.org/abs/2002.09104
Autor:
Huang, Yu-Sheng, Liu, Yan-Ting, Perng, Tsong-Pyng, Lu, Ming-Yen, Chueh, Yu-Lun, Chen, Lih-Juann
Publikováno v:
In Nano Energy May 2023 109
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Publikováno v:
In Engineering Structures 1 December 2022 272